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Chemical origin of the yellow luminescence in GaN

Kucheyev, Sergei; Toth, M; Phillips, Matthew R; Williams, James S; Jagadish, Chennupati; Li, Gang


The influence of ion-beam-produced lattice defects as well as H, B, C, N, O, and Si, introduced by ion implantation, on the luminescence properties of wurtzite GaN is studied by cathodoluminescence spectroscopy. Results indicate that intrinsic lattice defects produced by ion bombardment mainly act as nonradiative recombination centers and do not give rise to the yellow luminescence (YL) of GaN. Experimental data unequivocally shows that C is involved in the defect-impurity complex...[Show more]

CollectionsANU Research Publications
Date published: 2002-05-01
Type: Journal article
Source: Journal of Applied Physics
DOI: 10.1063/1.1467605


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