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Characterization of deep level traps responsible for isolation of proton implanted GaAs

Boudinov, H; Coelho, A V P; Jagadish, Chennupati; Tan, Hark Hoe

Description

Deep level transient spectroscopy was employed to determine the electrical properties of defects induced in metalorganic chemical-vapor deposition grown n-type and p-type GaAs during proton bombardment. Thermal stability of these defects was investigated and correlation with defects responsible for isolation of GaAs by ion bombardment was discussed. The annealing temperature region (220–250 °C) is similar to proton isolated GaAs below the threshold dose for complete isolation. At least four of...[Show more]

dc.contributor.authorBoudinov, H
dc.contributor.authorCoelho, A V P
dc.contributor.authorJagadish, Chennupati
dc.contributor.authorTan, Hark Hoe
dc.date.accessioned2010-09-22T01:57:36Z
dc.date.accessioned2010-12-20T06:04:13Z
dc.date.available2010-09-22T01:57:36Z
dc.date.available2010-12-20T06:04:13Z
dc.identifier.citationJournal of Applied Physics 93.6 (2003): 3234-8
dc.identifier.issn0021-8979
dc.identifier.issn1089-7550
dc.identifier.urihttp://hdl.handle.net/10440/1108
dc.identifier.urihttp://digitalcollections.anu.edu.au/handle/10440/1108
dc.description.abstractDeep level transient spectroscopy was employed to determine the electrical properties of defects induced in metalorganic chemical-vapor deposition grown n-type and p-type GaAs during proton bombardment. Thermal stability of these defects was investigated and correlation with defects responsible for isolation of GaAs by ion bombardment was discussed. The annealing temperature region (220–250 °C) is similar to proton isolated GaAs below the threshold dose for complete isolation. At least four of the five traps observed in n-type GaAs are not simple interstitial-vacancy pairs. For p-type GaAs we have observed an unknown level with apparent energy of ~0.64 eV.
dc.format5 pages
dc.publisherAmerican Institute of Physics
dc.rightshttp://www.sherpa.ac.uk/romeo/index.php "Author can archive pre-print (ie pre-refereeing) … post-print (ie final draft post-refereeing) … [and] publisher's version/PDF. Link to publisher version … [and] Copyright notice required. Publisher's version/PDF can be used on … employers web site. " - from SHERPA/RoMEO site (as at 25/02/10) © 2003 The American Institute of Physics. "This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics." - from publisher web site (as at 04/05/10)
dc.sourceJournal of Applied Physics
dc.source.urihttp://link.aip.org/link/JAPIAU/v93/i6/p3234/s1
dc.subjectgallium arsenide
dc.subjectIII-V semiconductors
dc.subjectdeep levels
dc.subjectdeep level transient spectroscopy
dc.subjectthermal stability
dc.subjectdefect states
dc.subjectproton effects
dc.subjection implantation
dc.subjectMOCVD coatings
dc.subjectannealing
dc.titleCharacterization of deep level traps responsible for isolation of proton implanted GaAs
dc.typeJournal article
local.description.refereedYes
local.identifier.citationvolume93
dcterms.dateAccepted2002-12-19
dc.date.issued2003-03-15
local.identifier.absfor091207
local.identifier.ariespublicationMigratedxPub17967
local.publisher.urlhttp://www.aip.org/
local.type.statusPublished Version
local.contributor.affiliationBoudinov, H, Instituto de Fisica
local.contributor.affiliationCoelho, A V P, Instituto de Fisica
local.contributor.affiliationTan, Hoe Hark, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, ANU
local.bibliographicCitation.issue6
local.bibliographicCitation.startpage3234
local.bibliographicCitation.lastpage3238
local.identifier.doi10.1063/1.1554761
dc.date.updated2015-12-12T08:35:51Z
local.identifier.scopusID2-s2.0-0037444842
CollectionsANU Research Publications

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