Capture cross sections of the acceptor level of iron-boron pairs in p-type silicon by injection-level dependent lifetime measurements
Injection-level dependent recombination lifetime measurements of iron-diffused, boron-doped silicon wafers of different resistivities are used to determine the electron and hole capture crosssections of the acceptor level of iron-boron pairs in silicon. The relative populations of iron-boron pairs and interstitial iron were varied by exposing the samples to different levels of illumination prior to lifetime measurements. The components of the effective lifetime due to interstitial iron...[Show more]
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