Capture cross sections of the acceptor level of iron-boron pairs in p-type silicon by injection-level dependent lifetime measurements
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Macdonald, D; Cuevas, Andres; Wong-Leung, Yin-Yin
Description
Injection-level dependent recombination lifetime measurements of iron-diffused, boron-doped silicon wafers of different resistivities are used to determine the electron and hole capture crosssections of the acceptor level of iron-boron pairs in silicon. The relative populations of iron-boron pairs and interstitial iron were varied by exposing the samples to different levels of illumination prior to lifetime measurements. The components of the effective lifetime due to interstitial iron...[Show more]
Collections | ANU Research Publications |
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Date published: | 2001-06-15 |
Type: | Journal article |
URI: | http://hdl.handle.net/10440/1106 http://digitalcollections.anu.edu.au/handle/10440/1106 |
DOI: | 10.1063/1.1372156 |
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Macdonald_Capture2001.pdf | 128.22 kB | Adobe PDF | ![]() |
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