Capacitive effects in quasi-steady-state voltage and lifetime measurements of silicon devices
When measuring I-V characteristics and carrier lifetimes in quasi-steady-state QSS conditions, it is important to consider the time dependence of the charge due to excess carriers within the device. This paper shows that the space-charge region present in pn-junction devices and in many lifetime test structures can produce a significant capacitive effect when measuring the low voltage and low carrier density range of QSS I-V curves. Both computer modeling and experiments show that...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|Cuevas_Capacitive2005.pdf||119.25 kB||Adobe PDF|
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