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Capacitive effects in quasi-steady-state voltage and lifetime measurements of silicon devices

Cuevas, Andres; Recart, F


When measuring I-V characteristics and carrier lifetimes in quasi-steady-state QSS conditions, it is important to consider the time dependence of the charge due to excess carriers within the device. This paper shows that the space-charge region present in pn-junction devices and in many lifetime test structures can produce a significant capacitive effect when measuring the low voltage and low carrier density range of QSS I-V curves. Both computer modeling and experiments show that...[Show more]

CollectionsANU Research Publications
Date published: 2005-10-11
Type: Journal article
Source: Journal of Applied Physics
DOI: 10.1063/1.2073973


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