Blistering of H-implanted GaN
Mechanisms of blistering of wurtzite GaN films implanted with H ions are studied. In particular, we report on the influence of the following parameters on the blistering process: (i) ion energy (from 20 to 150 keV), (ii) ion dose (up to 1.2×1018 cm−2), (iii) implantation temperature (from −196 to 250 °C), and (iv) annealing temperature (up to 900 °C). Results show that both the onset of blistering and blistering surface patterns strongly depend on implant conditions. This study may have...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|Kucheyev_Blistering2002.pdf||344.1 kB||Adobe PDF|
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