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Blistering of H-implanted GaN

Kucheyev, Sergei; Williams, James S; Jagadish, Chennupati; Zou, Jin; Li, Gang


Mechanisms of blistering of wurtzite GaN films implanted with H ions are studied. In particular, we report on the influence of the following parameters on the blistering process: (i) ion energy (from 20 to 150 keV), (ii) ion dose (up to 1.2×1018 cm−2), (iii) implantation temperature (from −196 to 250 °C), and (iv) annealing temperature (up to 900 °C). Results show that both the onset of blistering and blistering surface patterns strongly depend on implant conditions. This study may have...[Show more]

CollectionsANU Research Publications
Date published: 2002-03-15
Type: Journal article
Source: Journal of Applied Physics
DOI: 10.1063/1.1430533


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