Blistering of H-implanted GaN

Abstract

Mechanisms of blistering of wurtzite GaN films implanted with H ions are studied. In particular, we report on the influence of the following parameters on the blistering process: (i) ion energy (from 20 to 150 keV), (ii) ion dose (up to 1.2×1018 cm−2), (iii) implantation temperature (from −196 to 250 °C), and (iv) annealing temperature (up to 900 °C). Results show that both the onset of blistering and blistering surface patterns strongly depend on implant conditions. This study may have significant technological implications for ion slicing and “etching” of GaN using high-dose implantation with H ions.