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Athermal annealing of Si-implanted GaAs and InP

Rao, Mulpuri V; Brookshire, J; Mitra, S N; Qadri, S B; Fischer, R; Grun, J; Papanicolaou, N; Yousuf, M; Ridgway, Mark C


GaAs and InP crystals ion implanted with Si were athermally annealed by exposing each crystal at a spot of ~2 mm diameter to a high-intensity 1.06 μm wavelength pulsed laser radiation with ~4 J pulse energy for 35 ns in a vacuum chamber. As a result a crater is formed at the irradiated spot. The crater is surrounded by a dark-colored ring-shaped region which is annealed by mechanical energy generated by rapidly expanding hot plasma that formed on the exposed spot. The...[Show more]

CollectionsANU Research Publications
Date published: 2003-07-01
Type: Journal article
Source: Journal of Applied Physics
DOI: 10.1063/1.1576896


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