Athermal annealing of Si-implanted GaAs and InP
GaAs and InP crystals ion implanted with Si were athermally annealed by exposing each crystal at a spot of ~2 mm diameter to a high-intensity 1.06 μm wavelength pulsed laser radiation with ~4 J pulse energy for 35 ns in a vacuum chamber. As a result a crater is formed at the irradiated spot. The crater is surrounded by a dark-colored ring-shaped region which is annealed by mechanical energy generated by rapidly expanding hot plasma that formed on the exposed spot. The...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|Rao_Athermal2003.pdf||175.07 kB||Adobe PDF|
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