Skip navigation
Skip navigation

Annealing temperature dependence of capacitance-voltage characteristics in Ge-nanocrystal-based nonvolatile memory structures

Park, C J; Cho, H Y; Kim, S; Choi, Suk Ho; Elliman, Robert G; Han, J H; Kim, Chungwoo; Hwang, H N; Hwang, C C

Description

The annealing temperature (TA) dependence of capacitance-voltage (C-V) characteristics has been studied in metal-oxide-semiconductor structures containing Ge nanocrystals (NCs) produced by ion implantation and annealing. These structures are of interest for application as nonvolatile memory and TA is shown to have a strong influence on the C-V hysteresis. This behavior is shown to be correlated with structural changes of the Ge NCs which have been characterized by synchrotron-radiation...[Show more]

dc.contributor.authorPark, C J
dc.contributor.authorCho, H Y
dc.contributor.authorKim, S
dc.contributor.authorChoi, Suk Ho
dc.contributor.authorElliman, Robert G
dc.contributor.authorHan, J H
dc.contributor.authorKim, Chungwoo
dc.contributor.authorHwang, H N
dc.contributor.authorHwang, C C
dc.date.accessioned2010-09-15T02:08:28Z
dc.date.accessioned2010-12-20T06:05:57Z
dc.date.available2010-09-15T02:08:28Z
dc.date.available2010-12-20T06:05:57Z
dc.identifier.citationJournal of Applied Physics 99.3 (2006): 036101/1-3
dc.identifier.issn0021-8979
dc.identifier.issn1089-7550
dc.identifier.urihttp://hdl.handle.net/10440/1093
dc.identifier.urihttp://digitalcollections.anu.edu.au/handle/10440/1093
dc.description.abstractThe annealing temperature (TA) dependence of capacitance-voltage (C-V) characteristics has been studied in metal-oxide-semiconductor structures containing Ge nanocrystals (NCs) produced by ion implantation and annealing. These structures are of interest for application as nonvolatile memory and TA is shown to have a strong influence on the C-V hysteresis. This behavior is shown to be correlated with structural changes of the Ge NCs which have been characterized by synchrotron-radiation photoemission spectroscopy. Specifically, well-defined C-V characteristics with large hysteresis were found only for annealing temperatures greater than 950 °C where Ge nanocrystals are known to form. In this temperature regime, transmission electron microcopy and energy dispersive x-ray spectroscopy demonstrate the existence of regularly arranged Ge NCs of approximately 3–5 nm diameter located around 6.7 nm from the interface.
dc.format3 pages
dc.publisherAmerican Institute of Physics
dc.rightshttp://www.sherpa.ac.uk/romeo/index.php "Author can archive pre-print (ie pre-refereeing) … post-print (ie final draft post-refereeing) … [and] publisher's version/PDF. Link to publisher version … [and] Copyright notice required. Publisher's version/PDF can be used on … employers web site. " - from SHERPA/RoMEO site (as at 25/02/10) © 2006 The American Institute of Physics. "This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics." - from publisher web site (as at 04/05/10)
dc.sourceJournal of Applied Physics
dc.source.urihttp://link.aip.org/link/JAPIAU/v99/i3/p036101/s1
dc.subjectgermanium
dc.subjectelemental semiconductors
dc.subjectnanostructured materials
dc.subjectannealing
dc.subjectMIS structures
dc.subjection implantation
dc.subjecthysteresis
dc.subjectphotoelectron spectra
dc.subjecttransmission electron microscopy
dc.subjectX-ray chemical analysis
dc.titleAnnealing temperature dependence of capacitance-voltage characteristics in Ge-nanocrystal-based nonvolatile memory structures
dc.typeJournal article
local.identifier.citationvolume99
dcterms.dateAccepted2005-12-16
dc.date.issued2006-02-07
local.identifier.absfor020406 (40%), 020405 (40%), 100799 (20%)
local.identifier.ariespublicationu4047546xPUB25
local.publisher.urlhttp://www.aip.org/
local.type.statusPublished Version
local.contributor.affiliationPark, C J, Dongguk University
local.contributor.affiliationCho, H Y, Dongguk University
local.contributor.affiliationKim, S, Dongguk University
local.contributor.affiliationChoi, Suk Ho, Kyung Hee University
local.contributor.affiliationElliman, Robert, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationHan, J H, Samsung Advanced Institute of Technology
local.contributor.affiliationKim, Chungwoo, Samsung Advanced Institute of Technology
local.contributor.affiliationHwang, H N , Pohang University of Science and Technology
local.contributor.affiliationHwang, C C , Pohang University of Science and Technology
local.bibliographicCitation.issue3
local.bibliographicCitation.startpage036101-1-3
local.identifier.doi10.1063/1.2168249
dc.date.updated2015-12-08T03:19:36Z
local.identifier.scopusID2-s2.0-33645513421
CollectionsANU Research Publications

Download

File Description SizeFormat Image
Park_Annealing2006.pdf180.25 kBAdobe PDFThumbnail


Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  12 November 2018/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator