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Annealing temperature dependence of capacitance-voltage characteristics in Ge-nanocrystal-based nonvolatile memory structures

Park, C J; Cho, H Y; Kim, S; Choi, Suk Ho; Elliman, Robert G; Han, J H; Kim, Chungwoo; Hwang, H N; Hwang, C C

Description

The annealing temperature (TA) dependence of capacitance-voltage (C-V) characteristics has been studied in metal-oxide-semiconductor structures containing Ge nanocrystals (NCs) produced by ion implantation and annealing. These structures are of interest for application as nonvolatile memory and TA is shown to have a strong influence on the C-V hysteresis. This behavior is shown to be correlated with structural changes of the Ge NCs which have been characterized by synchrotron-radiation...[Show more]

CollectionsANU Research Publications
Date published: 2006-02-07
Type: Journal article
URI: http://hdl.handle.net/10440/1093
http://digitalcollections.anu.edu.au/handle/10440/1093
Source: Journal of Applied Physics
DOI: 10.1063/1.2168249

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