Annealing temperature dependence of capacitance-voltage characteristics in Ge-nanocrystal-based nonvolatile memory structures
The annealing temperature (TA) dependence of capacitance-voltage (C-V) characteristics has been studied in metal-oxide-semiconductor structures containing Ge nanocrystals (NCs) produced by ion implantation and annealing. These structures are of interest for application as nonvolatile memory and TA is shown to have a strong influence on the C-V hysteresis. This behavior is shown to be correlated with structural changes of the Ge NCs which have been characterized by synchrotron-radiation...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|Park_Annealing2006.pdf||180.25 kB||Adobe PDF|
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