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Annealing induced phase transformations in amorphous As2S3 films

Wang, Rongping; Madden, Steve; Zha, Congji; Rode, Andrei V; Luther-Davies, Barry


Amorphous arsenic sulphide (As2S3) films prepared by ultrafast pulsed laser deposition have been vacuum annealed at a range of different temperatures. Measurements of the glass transition temperature indicate that a crystallization process initiates at annealing temperatures around 170 °C. In combination with Raman scattering analysis, we conclude that phase separation is intrinsic for our as-deposited films. During annealing two sorts of phase transformation are identified: one between...[Show more]

CollectionsANU Research Publications
Date published: 2006-09-27
Type: Journal article
Source: Journal of Applied Physics
DOI: 10.1063/1.2353787


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