Annealing induced phase transformations in amorphous As2S3 films
Amorphous arsenic sulphide (As2S3) films prepared by ultrafast pulsed laser deposition have been vacuum annealed at a range of different temperatures. Measurements of the glass transition temperature indicate that a crystallization process initiates at annealing temperatures around 170 °C. In combination with Raman scattering analysis, we conclude that phase separation is intrinsic for our as-deposited films. During annealing two sorts of phase transformation are identified: one between...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|Wang_Annealing2006.pdf||85.7 kB||Adobe PDF|
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