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Analytical expression for the quantum dot contribution to the quasistatic capacitance for conduction band characterization

Buda, Manuela; Iordache, G; Mokkapati, Sudha; Fu, Lan; Jolley, Greg; Jagadish, Chennupati; Buda, Mi; Tan, Hark Hoe

Description

This paper demonstrates an analytical expression for the quasistatic capacitance of a quantum dot layer embedded in a junction, where the reverse bias is used to discharge the initially occupied energy levels. This analysis can be used to determine the position and the Gaussian homogeneous broadening of the energy levels in the conduction band, and is applied for an InGaAs/GaAs quantum dot structure grown by metal organic chemical vapor deposition. It is shown that the Gaussian broadening of...[Show more]

dc.contributor.authorBuda, Manuela
dc.contributor.authorIordache, G
dc.contributor.authorMokkapati, Sudha
dc.contributor.authorFu, Lan
dc.contributor.authorJolley, Greg
dc.contributor.authorJagadish, Chennupati
dc.contributor.authorBuda, Mi
dc.contributor.authorTan, Hark Hoe
dc.date.accessioned2010-09-15T00:17:36Z
dc.date.accessioned2010-12-20T06:03:01Z
dc.date.available2010-09-15T00:17:36Z
dc.date.available2010-12-20T06:03:01Z
dc.identifier.citationJournal of Applied Physics 104.2 (2008): 023713/1-11
dc.identifier.issn0021-8979
dc.identifier.issn1089-7550
dc.identifier.urihttp://hdl.handle.net/10440/1090
dc.identifier.urihttp://digitalcollections.anu.edu.au/handle/10440/1090
dc.description.abstractThis paper demonstrates an analytical expression for the quasistatic capacitance of a quantum dot layer embedded in a junction, where the reverse bias is used to discharge the initially occupied energy levels. This analysis can be used to determine the position and the Gaussian homogeneous broadening of the energy levels in the conduction band, and is applied for an InGaAs/GaAs quantum dot structure grown by metal organic chemical vapor deposition. It is shown that the Gaussian broadening of the conduction band levels is significantly larger than the broadening of the interband photoluminescence (PL) transitions involving both conduction and hole states. The analysis also reveals a contribution from the wetting layer both in PL and modeled C-V profiles which is much stronger than in typical molecular beam epitaxy grown dots. The presence of a built-in local field oriented from the apex of the dot toward its base, contrary to the direction expected for a strained dot with uniform composition (negative dipole), is also derived from fitting of the C-V experimental data.
dc.format11 pages
dc.publisherAmerican Institute of Physics
dc.rightshttp://www.sherpa.ac.uk/romeo/index.php "Author can archive pre-print (ie pre-refereeing) … post-print (ie final draft post-refereeing) … [and] publisher's version/PDF. Link to publisher version … [and] Copyright notice required. Publisher's version/PDF can be used on … employers web site. " - from SHERPA/RoMEO site (as at 25/02/10) © 2008 The American Institute of Physics. "This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics." - from publisher web site (as at 04/05/10)
dc.sourceJournal of Applied Physics
dc.source.urihttp://link.aip.org/link/JAPIAU/v104/i2/p023713/s1
dc.subjectconduction bands
dc.subjectgallium arsenide
dc.subjectgallium compounds
dc.subjectIII-V semiconductors
dc.subjectindium compounds
dc.subjectMOCVD
dc.subjectphotoluminescence
dc.subjectsemiconductor growth
dc.subjectsemiconductor quantum dots
dc.titleAnalytical expression for the quantum dot contribution to the quasistatic capacitance for conduction band characterization
dc.typeJournal article
local.identifier.citationvolume104
dcterms.dateAccepted2008-05-26
dc.date.issued2008-07-30
local.identifier.absfor020400 (80%), 091200 (20%)
local.identifier.ariespublicationu3488905xPUB99
local.publisher.urlhttp://www.aip.org/
local.type.statusPublished Version
local.contributor.affiliationBuda, M, National Institute of Materials Physics
local.contributor.affiliationIordache, G, Eindhoven University of Technology
local.contributor.affiliationMokkapati, Sudha, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationFu, Lan, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationJolley, Greg, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationTan, Hoe Hark, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationBuda, M, Eindhoven University of Technology
local.bibliographicCitation.issue2
local.bibliographicCitation.startpage1
local.bibliographicCitation.lastpage11
local.identifier.doi10.1063/1.2959681
dc.date.updated2015-12-08T08:58:51Z
local.identifier.scopusID2-s2.0-48849106096
local.identifier.thomsonID000258174800064
CollectionsANU Research Publications

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