Analytical expression for the quantum dot contribution to the quasistatic capacitance for conduction band characterization
This paper demonstrates an analytical expression for the quasistatic capacitance of a quantum dot layer embedded in a junction, where the reverse bias is used to discharge the initially occupied energy levels. This analysis can be used to determine the position and the Gaussian homogeneous broadening of the energy levels in the conduction band, and is applied for an InGaAs/GaAs quantum dot structure grown by metal organic chemical vapor deposition. It is shown that the Gaussian broadening of...[Show more]
|Collections||ANU Research Publications|
|Source:||Journal of Applied Physics|
|Buda_Analytical2008.pdf||897.28 kB||Adobe PDF|
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