Skip navigation
Skip navigation

Analytical expression for the quantum dot contribution to the quasistatic capacitance for conduction band characterization

Buda, Manuela; Iordache, G; Mokkapati, Sudha; Fu, Lan; Jolley, Greg; Jagadish, Chennupati; Buda, Mi; Tan, Hark Hoe


This paper demonstrates an analytical expression for the quasistatic capacitance of a quantum dot layer embedded in a junction, where the reverse bias is used to discharge the initially occupied energy levels. This analysis can be used to determine the position and the Gaussian homogeneous broadening of the energy levels in the conduction band, and is applied for an InGaAs/GaAs quantum dot structure grown by metal organic chemical vapor deposition. It is shown that the Gaussian broadening of...[Show more]

CollectionsANU Research Publications
Date published: 2008-07-30
Type: Journal article
Source: Journal of Applied Physics
DOI: 10.1063/1.2959681


File Description SizeFormat Image
Buda_Analytical2008.pdf897.28 kBAdobe PDFThumbnail

Items in Open Research are protected by copyright, with all rights reserved, unless otherwise indicated.

Updated:  17 November 2022/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator