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A comparison of impurity-free and ion-implantation-induced intermixing of InGaAs/InP quantum wells

Dao, Lap Van; Gal, Michael; Carmody, C; Tan, Hoe Hark; Jagadish, Chennupati


We have compared the time integrated photoluminescence (PL) and the time resolved PL of several lattice matched InGaAs/InP quantum wells intermixed either by ion implantation or an impurity-free method. We have found that the carrier capture rates into quantum wells and carrier relaxation from the wells depend on the type of intermixing used. Our results indicate that the carrier lifetimes are significantly longer in samples intermixed by the impurity-free methods, while the carrier...[Show more]

CollectionsANU Research Publications
Date published: 2000-11-01
Type: Journal article
Source: Journal of Applied Physics
DOI: 10.1063/1.1314904


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