The size distribution of Ge nanocrystals in implanted and annealed silica

Abstract

This study examines the effect of implantation and annealing parameters on the formation of Ge crystallites in ion-implanted silica. Samples were implanted at room temperature or -196°C with 1.0 MeV Ge+ ions to fluences in the range from 0.6 to 3×1017 Ge.cm-2. Ge nanocrystals were not observed in samples implanted at -196°C but were observed in samples irradiated at room temperature. Nanocrystals were observed in all samples after annealing and their size distribution was found to be almost independent of the implant fluence. The distributions were also shown to be asymmetrical with depth, with smaller nanocrystals located on the near-surface side of the implant distribution. Show more