Impurity gettering by silicon nitride films: kinetics, mechanisms and simulation
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Le, Tien Trong
Hameiri, Ziv
MacDonald, Daniel
Liu, An Yao
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Institute of Electrical and Electronics Engineers Inc.
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Abstract
The mechanisms behind the gettering effect of silicon nitride films for removing iron impurities in silicon are investigated in this study. The silicon nitride films are from plasma-enhanced chemical vapor deposition (PECVD). By monitoring the iron reduction kinetics in the silicon wafer bulk during cumulative anneals, it is found that silicon nitride gettering takes place mainly via a segregation mechanism with an activation energy of 0.9±0.1 eV for the investigated PECVD silicon nitride film.
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2021 IEEE 48th Photovoltaic Specialists Conference (PVSC), Fort Lauderdale, FL, USA
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