Use of MeV O+ ion implantation for isolation of GaAs/AlGaAs heterojunction bipolar transistors
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Pearton, S. J.
Ren, F.
Lothian, J. R.
Fullowan, T. R.
Katz, A.
Wisk, P. W.
Abernathy, C. R.
Kopf, R. F.
Elliman, R. G.
Ridgway, M. C.
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The implant isolation characteristics of highly doped n- and p-type GaAs epitaxial layers implanted with 5 MeV O+ ions are reported. High (∼108 Ω/D'Alembertian sign) sheet resistances are obtained in such layers following annealing at 550-600 °C for ion doses around 1015 cm-2. The residual conductivity is still due to hopping processes with small activation (50-70 meV) energies. The use of a single MeV O+ implant considerably simplifies the isolation of GaAs/AlGaAs heterojunction bipolar transistor (HBT) structures relative to the usual multiple-implant keV energy scheme. Small geometry (2×5 μm 2) HBTs with gains of 25 for highly-doped (p=7×1019 cm-3) base layer structures have been fabricated using MeV implant isolation.
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Journal of Applied Physics
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