LASER IRRADIATION EFFECTS IN SEMICONDUCTORS.
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Wagenfeld, H. K.
Williams, J. S.
Harrison, H. B.
Elliman, R. G.
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Abstract
Laser and furnace annealing mechanisms in high-dose ion implanted silicon and gallium arsenide are examined in some detail using a number of complementary analysis techniques. Results indicate that the two predominant recrystallization processes, namely solid and liquid phase epitaxy, can lead to interesting structural effects and supersaturated solid solutions.
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Annual Proceedings - Reliability Physics (Symposium)
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