Diffusion of implanted impurities in amorphous Si
Date
Authors
Poate, J. M.
Jacobson, D. C.
Williams, J. S.
Elliman, R. G.
Boerma, D. O.
Journal Title
Journal ISSN
Volume Title
Publisher
Access Statement
Abstract
The diffusion coefficients of Cu, Ag and Au have been measured in implanted, amorphous Si. The temperature dependences over the range 150-600° C are characterized by Arrhenius relationships with activation energies for Cu, Ag and Au of 1.25, 1.6 and 1.4 eV, respectively. Diffusion is concentration dependent. The diffusion coefficients correlate remarkably well, when extrapolated to high temperatures, with the corresponding slower or "substitutional-like" diffusion coefficients in crystalline Si.
Description
Keywords
Citation
Collections
Source
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Type
Book Title
Entity type
Publication