Intermixing induced resonance shift in GaAs/Al xO y DBR resonators

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Cohen, M. I.
Tan, H. H.
Jagadish, C.

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The effect of ion induced interdiffusion on the resonant wavelength of GaAs/Al xO y DBRs is investigated. As interdiffusion becomes stronger, the resonant wavelength is seen to red-shift. Resonance shifts of greater than 30 nm were observed. A model is proposed to explain this behaviour. This model agrees well with previous lateral oxidation studies.

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