678-mV open-circuit voltage silicon solar cells

dc.contributor.authorBlakers, A. W.en
dc.contributor.authorGreen, M. A.en
dc.date.accessioned2026-01-04T19:41:51Z
dc.date.available2026-01-04T19:41:51Z
dc.date.issued1981en
dc.description.abstractA new high-performance cell structure has been developed, combining the better features of metal insulator semiconductor and p-n junction technologies. The metal-insulator-NP junction (MINP) cell technology described has an inherently superior performance to either of its constituent technologies, producing open-circuit voltages up to 678 mV (AMO, 25°C) for silicon cells. Analysis of the dark saturation current of MINP devices as a function of bulk resistivity indicates that both bulk and surface recombination contribute to this current, with the former dominating. Prospects for exceeding 700-mV open-circuit voltage with this approach are discussed. The structure is particularly well suited for fabrication using ion implantation.en
dc.description.statusPeer-revieweden
dc.format.extent3en
dc.identifier.issn0003-6951en
dc.identifier.otherORCID:/0000-0002-0800-2276/work/162946149en
dc.identifier.scopus36749109816en
dc.identifier.urihttps://hdl.handle.net/1885/733803569
dc.language.isoenen
dc.sourceApplied Physics Lettersen
dc.title678-mV open-circuit voltage silicon solar cellsen
dc.typeJournal articleen
dspace.entity.typePublicationen
local.bibliographicCitation.lastpage485en
local.bibliographicCitation.startpage483en
local.contributor.affiliationBlakers, A. W.; Solar Photovoltaic Laboratoryen
local.contributor.affiliationGreen, M. A.; Solar Photovoltaic Laboratoryen
local.identifier.citationvolume39en
local.identifier.doi10.1063/1.92767en
local.identifier.pureacb08e35-82d6-4ac8-8435-63ea04b19bbfen
local.identifier.urlhttps://www.scopus.com/pages/publications/36749109816en
local.type.statusPublisheden

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