678-mV open-circuit voltage silicon solar cells

Abstract

A new high-performance cell structure has been developed, combining the better features of metal insulator semiconductor and p-n junction technologies. The metal-insulator-NP junction (MINP) cell technology described has an inherently superior performance to either of its constituent technologies, producing open-circuit voltages up to 678 mV (AMO, 25°C) for silicon cells. Analysis of the dark saturation current of MINP devices as a function of bulk resistivity indicates that both bulk and surface recombination contribute to this current, with the former dominating. Prospects for exceeding 700-mV open-circuit voltage with this approach are discussed. The structure is particularly well suited for fabrication using ion implantation. Show more