Impurity-stimulated crystallization and diffusion in amorphous silicon

Abstract

An amorphous-to-polycrystalline silicon transformation and concomitant In redistribution have been observed in In-implanted silicon at temperatures well below those at which solid phase epitaxial growth or random crystallization is observed in undoped films. The process is extremely rapid and exhibits a strong dependence on both In concentration and temperature. It is proposed that the In redistribution and accompanying silicon crystallization are mediated by molten, In-rich precipitates in amorphous silicon. Show more