The fabrication of epitaxial GexSi1-x layers by ion implantation
Date
Authors
Elliman, R. G.
Wong, W. C.
Journal Title
Journal ISSN
Volume Title
Publisher
Access Statement
Abstract
Time-resolved reflectivity and Rutherford backscattering and channelling spectrometry have been combined to study solid-phase epitaxial growth of Ge implanted (100) Si. Analysis shows that high quality epitaxial GexSi1-x alloy layers can be fabricated in this manner for implant fluences below a critical value, in good agreement with theoretical predictions. For thick alloy layers fabricated by high energy (800 keV) implantation, time-resolved reflectivity shows that the solid phase epitaxial growth rate varies in a complex manner which is consistent with strain relaxation processes occurring during epitaxy.
Description
Keywords
Citation
Collections
Source
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Type
Book Title
Entity type
Publication