Ultrafast pulsed laser deposition of chalcogenide glass films for low-loss optical waveguides

dc.contributor.authorLuther-Davies, B.en
dc.contributor.authorKolev, V. Z.en
dc.contributor.authorLederer, M. J.en
dc.contributor.authorYinlan, R.en
dc.contributor.authorSamoc, M.en
dc.contributor.authorJarvis, R. A.en
dc.contributor.authorRode, A. V.en
dc.contributor.authorGiesekus, J.en
dc.contributor.authorDu, K. M.en
dc.contributor.authorDuering, M.en
dc.date.accessioned2025-12-31T18:41:45Z
dc.date.available2025-12-31T18:41:45Z
dc.date.issued2003en
dc.description.abstractUltra-fast pulsed laser deposition using high-repetition-rate short-pulse lasers has been shown to provide high optical quality, super smooth thin films free of scattering centres. The optimized process conditions require short ps or sub-ps pulses with repetition rate in the range 1-100 MHz, depending on the target material. Ultra-fast pulsed laser deposition was used to successfully deposit atomicaliy-smooth, Smicron thick As2S3 films. The as-deposited films were photosensitive at wavelengths close to the band edge (≈520 nm) and waveguides could be directly patterned into them by photo-darkening using an Argon ion or frequency doubled Nd:YAG laser. The linear and nonlinear optical properties of the films were measured as well as the photosensitivity of the material. The optical losses in photo-darkened waveguides were <0.2 dB/cm at wavelengths beyond 1200nm and <0.1 dB/cm in as-deposited films. The third order nonlinearity, n2,As2S3, was measured using both four-wave mixing and the z-scan technique and varied with wavelength from 100 to 200 times fused silica (n2,Silica ≈3×10-16 cm2/W) between 1100nm and 1100nm with low nonlinear absorption. Encouraged by the Ultrafast laser deposition results, we have built a new specialized mode-locked picosecond laser system for deposition of optical films and for laser formation of nanoclusters. The newly developed "state of the art" powerful Nd:YVO laser can operate over a wide range of wavelengths, intensities, and repetition rates in MHz range. A brief description of the 50W laser installation is presented.en
dc.description.statusPeer-revieweden
dc.format.extent12en
dc.identifier.issn0272-9172en
dc.identifier.otherORCID:/0000-0002-2747-5036/work/161269377en
dc.identifier.otherORCID:/0000-0002-9869-9782/work/162207509en
dc.identifier.scopus0345357868en
dc.identifier.urihttps://hdl.handle.net/1885/733797814
dc.language.isoenen
dc.relation.ispartofseriesMATERIALS RESEARCH SOCIETY SYMPOSIUM - PROCEEDINGS: Advanced Optical Processing of Materialsen
dc.sourceMaterials Research Society Symposium - Proceedingsen
dc.titleUltrafast pulsed laser deposition of chalcogenide glass films for low-loss optical waveguidesen
dc.typeConference paperen
dspace.entity.typePublicationen
local.bibliographicCitation.lastpage142en
local.bibliographicCitation.startpage131en
local.contributor.affiliationLuther-Davies, B.; Department of Quantum Science & Technology, Research School of Physics, ANU College of Science and Medicine, The Australian National Universityen
local.contributor.affiliationKolev, V. Z.; Department of Quantum Science & Technology, Research School of Physics, ANU College of Science and Medicine, The Australian National Universityen
local.contributor.affiliationLederer, M. J.; Department of Quantum Science & Technology, Research School of Physics, ANU College of Science and Medicine, The Australian National Universityen
local.contributor.affiliationYinlan, R.; Australian National Universityen
local.contributor.affiliationSamoc, M.; Department of Quantum Science & Technology, Research School of Physics, ANU College of Science and Medicine, The Australian National Universityen
local.contributor.affiliationJarvis, R. A.; Department of Quantum Science & Technology, Research School of Physics, ANU College of Science and Medicine, The Australian National Universityen
local.contributor.affiliationRode, A. V.; Department of Quantum Science & Technology, Research School of Physics, ANU College of Science and Medicine, The Australian National Universityen
local.contributor.affiliationGiesekus, J.; Fraunhofer Institute for Laser Technologyen
local.contributor.affiliationDu, K. M.; Fraunhofer Institute for Laser Technologyen
local.contributor.affiliationDuering, M.; Fraunhofer Institute for Laser Technologyen
local.identifier.ariespublicationMigratedxPub17199en
local.identifier.citationvolume780en
local.identifier.doi10.1557/proc-780-y4.1en
local.identifier.pure9f822671-7697-4cf8-b82b-257f1b5c5109en
local.identifier.urlhttps://www.scopus.com/pages/publications/0345357868en
local.type.statusPublisheden

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