ZnS branched architectures as optoelectronic devices and field emitters

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Chen, Zhi Gang
Cheng, Lina
Xu, Hong Yi
Liu, Ji Zi
Zou, Jin
Sekiguchi, Takashi
Lu, Gao Qing
Cheng, Hui Ming

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(Figure Presented) A unique ZnS branched architecture was fabricated by a facile thermal evaporation method. Stable UV emission at 327 nm and superior field emission with a low turn-on field, a high field-enhancement factor, a large current density, and small fluctuation were observed.

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