Diffusion and precipitation in amorphous Si

Abstract

The diffusion and precipitation of several ion implanted impurities in amorphous Si have been observed at temperatures of 300-600°C. Typical slow diffusers in crystalline Si, such as As, In, Sb, and Bi, show little or no diffusion at low concentrations. At high concentrations (>1 at. %), they diffuse rapidly with D≳10-15 cm 2/s in the temperature range 500-600°C. Typical fast diffusers in crystalline Si, such as Cu and Au, diffuse in amorphous Si with D>10 -12 cm2/s at 400-600°C. Precipitation has been observed for both the fast and slow diffusers in amorphous Si. Show more