MeV In-ion implantation for electrical isolation of p⁺-InP

Abstract

Electrical isolation of p+-InP by MeV In-ion implantation has been compared with a multiple low-energy, O-ion implant sequence. The large straggle associated with an MeV In-ion implant results in a disorder level of comparable uniformity to that achieved with an O-ion implant sequence. The two implant schemes yield similar maximum sheet resistance values (∼ 6×106 Ω/sq) and thermal stabilities (400°C). However, the significant process simplification inherent with a single In-ion implant is advantageous. Show more