Proximity gettering of Au to ion beam induced defects in silicon
Date
Authors
Wong-Leung, J.
Williams, J. S.
Elliman, R. G.
Nygren, E.
Eaglesham, D. J.
Jacobson, D. C.
Poate, J. M.
Journal Title
Journal ISSN
Volume Title
Publisher
Access Statement
Abstract
Rutherford backscattering and transmission electron microscopy have been used to anlayse Au implanted Si (100) samples containing various types of implantation-induced disorder both before and after annealing. Gettering and precipitation phenomena are observed indicating complex diffusion behaviour and Au-defect interactions. For samples containinkg a subsurface band of internal cavities, almost 100% of implanted Au is gettered to such cavities when annealed at 850°C for 1 h.
Description
Keywords
Citation
Collections
Source
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Type
Book Title
Entity type
Publication