ANALYSIS OF RUTHERFORD SCATTERING-CHANNELLING MEASUREMENTS OF DISORDER PRODUCTION AND ANNEALING IN ION IRRADIATED SEMICONDUCTORS.
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Carter, G.
Elliman, R. G.
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The study of Rutherford Backscattering (RBS)/channelling results of log (yield) as a function of log (implant fluence) can be used to distinguish probable disordering mechanisms, in order to estimate disorder densities required for amorphousness collapse and to investigate thermal annealing processes.
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Radiation effects letters
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