Recrystallisation of relaxed SiGe alloy layers

Abstract

Recrystallisation of amorphous Si1-xGex alloy layers has been studied with Rutherford backscattering spectrometry/channelling (RBS/C) and time resolved reflectivity (TRR). Arrhenius behaviour was observed for the crystallisation velocity and the corresponding activation energy was extracted over the complete composition range (x = 0.0 to x = 1.0). Contrary to expectations, the activation energy did not exhibit a monotonic dependence on Ge concentration but was found to increase above that of Si for Ge concentrations in the range from x ∼ 0.10 to ∼ 0.40. The observed increase in activation energy is explained by an energy term caused by the difference in the actual bond-length and the natural bond-length. Show more