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Effect of V/III ratio on the structural quality of InAs nanowires

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Date

2014-02-10

Authors

Zhang, Zhi
Lu, Zhen Yu
Xu, Hong Yi
Chen, Ping Ping
Lu, Wei
Zou, Jin

Journal Title

Journal ISSN

Volume Title

Publisher

Institute of Electrical and Electronics Engineers Inc.

Access Statement

Research Projects

Organizational Units

Journal Issue

Abstract

In this study, the effect of V/III ratio on the structural quality of Au-catalyzed InAs nanowires grown by molecular beam epitaxy is investigated. It is found that, by tuning the V/III ratio, the structural quality of InAs nanowires can be controlled, and defect-free wurtzite structured InAs nanowires have been achieved under low V/III ratio growth.

Description

Keywords

Electron microscopy, InAs nanowires, MBE

Citation

URI

http://www.scopus.com/inward/record.url?scp=84949927717&partnerID=8YFLogxK
 https://hdl.handle.net/1885/733754787

Collections

ANU Research Publications

Source

Type

Conference paper

Book Title

2014 Conference on Optoelectronic and Microelectronic Materials and Devices, COMMAD 2014

Entity type

Publication

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DOI

10.1109/COMMAD.2014.7038642

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