IMPURITY DIFFUSION, CRYSTALLIZATION AND PHASE SEPARATION IN AMORPHOUS SILICON.
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Elliman, R. G.
Poate, J. M.
Williams, J. S.
Gibson, J. M.
Jacobson, D. C.
Sood, D. K.
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Materials Research Soc
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Abstract
Diffusion, crystallization and phase separation processes in indium implanted amorphous silicon are examined for low temperature annealing (600 degree C). Both diffusion and crystallization are shown to be extremely sensitive to the indium concentration. Diffusion coefficients more than 10 orders of magnitude higher than tracer diffusion coefficients in crystalline silicon are measured, and amorphous to crystalline silicon transitions at temperatures as low as 350 degree C are reported. Phase separation is also observed.
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Materials Research Society Symposia Proceedings
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