p Inversion layer SI solar cells as test for the I^Γ-S structure (poster): Results and prospects

Abstract

The Γ-S structure is a novel layer arrangement serving as a source for a negative drift field. Its application to solar cells is manifold and does not depend on Si. The deposition of the Aluminium Fluoride (AlF 3) layer involved can be implemented as final process in solar cell production; thus compatibility to existing processing sequences is given. First prototypes of a p inversion layer solar cell on Si were prepared providing evidence of function for the I-S structure. While conditions of preparation were far from optimum, a relative increase in conversion efficiency of 21 % was achieved for solar cells with I-S structure versa solar cells without it. For testing the field effect impact the AlF3 layer thickness was chosen to be 15 nm thus eliminating its additional advantage as anti-reflective coating (ARC).