First-principles modeling of dopants in C <sub>29</sub> and C <sub>29</sub>H <sub>24</sub> nanodiamonds

dc.contributor.authorBarnard, A. S.en
dc.contributor.authorRusso, S. P.en
dc.contributor.authorSnook, I. K.en
dc.date.accessioned2025-07-08T10:50:04Z
dc.date.available2025-07-08T10:50:04Z
dc.date.issued2005-06-23en
dc.description.abstractPresented here is our continuing first-principles density functional theory study of the structural stability of a select group of dopants in diamond nanocrystals. On the basis of the work of others concerning dopants in diamond and endohedral atoms in fullerenes, the dopants selected for use here are oxygen, aluminum, silicon, phosphorus, and sulfur. These atoms were included substitutionally in the center of a 29-carbon-atom nanodiamond crystal, and each structure was relaxed using the Vienna Ab Initio Simulation Package. We describe the bonding and structure of the relaxed doped nanocrystals via examination of the electron charge density and point group symmetry. In combination with our previously reported results, it is anticipated that these results will assist in providing a better understanding of the mechanical stability of doped nanodiamonds for use in diamond nanodevices.en
dc.description.statusPeer-revieweden
dc.format.extent5en
dc.identifier.issn1520-6106en
dc.identifier.otherORCID:/0000-0002-4784-2382/work/162952525en
dc.identifier.scopus22444440672en
dc.identifier.urihttps://hdl.handle.net/1885/733766349
dc.language.isoenen
dc.sourceJournal of Physical Chemistry Ben
dc.titleFirst-principles modeling of dopants in C <sub>29</sub> and C <sub>29</sub>H <sub>24</sub> nanodiamondsen
dc.typeJournal articleen
dspace.entity.typePublicationen
local.bibliographicCitation.lastpage11995en
local.bibliographicCitation.startpage11991en
local.contributor.affiliationBarnard, A. S.; Center for Nanoscale Materials and Materials Science Divisionen
local.contributor.affiliationRusso, S. P.; Royal Melbourne Institute of Technology Universityen
local.contributor.affiliationSnook, I. K.; Royal Melbourne Institute of Technology Universityen
local.identifier.citationvolume109en
local.identifier.doi10.1021/jp051519qen
local.identifier.pure8caf7548-6628-421f-bf74-316a073ece90en
local.identifier.urlhttps://www.scopus.com/pages/publications/22444440672en
local.type.statusPublisheden

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