Production and processing of semiconductor nanocrystals and nanostructures for photonic applications

dc.contributor.authorWilliams, J. S.en
dc.contributor.authorElliman, R. G.en
dc.contributor.authorTan, H. H.en
dc.contributor.authorLever, P.en
dc.contributor.authorWong-Leung, J.en
dc.contributor.authorJagadish, C.en
dc.date.accessioned2026-01-01T08:41:30Z
dc.date.available2026-01-01T08:41:30Z
dc.date.issued2002en
dc.description.abstractThis brief review focuses on the production and processing of nanocrystals and nanostructures in silicon, silicon dioxide and compound semiconductors. In each area the use of ion beams to either form or process the nanostructures features prominently. Three specific examples are given, i) Ion irradiation of semiconductors can be used for the formation of novel nanostructures such as the generation of a band of small voids or cavities that exhibit interesting properties, ii) Direct ion implantation into silicon dioxide can lead to the production of small nanocrystals, of silicon for example, that can emit light and have potential applications in novel optical devices on a silicon chip, iii) Novel, optically-emitting semiconductor nanostructures such as quantum wells and quantum dots can be grown by metal organic chemical vapour deposition on both gallium arsenide and indium phosphide substrates and ion irradiation can be used to tune the wavelength of the emitted light for device applications.en
dc.description.statusPeer-revieweden
dc.format.extent7en
dc.identifier.issn0883-2900en
dc.identifier.otherORCID:/0000-0002-1304-4219/work/160798852en
dc.identifier.otherORCID:/0000-0002-7816-537X/work/162372077en
dc.identifier.otherORCID:/0000-0003-1528-9479/work/162374486en
dc.identifier.scopus1942485333en
dc.identifier.urihttps://hdl.handle.net/1885/733799109
dc.language.isoenen
dc.relation.ispartofseries1st National Conference and Exhibition on Nanotechnologyen
dc.sourceMaterials Forumen
dc.titleProduction and processing of semiconductor nanocrystals and nanostructures for photonic applicationsen
dc.typeConference paperen
dspace.entity.typePublicationen
local.bibliographicCitation.lastpage80en
local.bibliographicCitation.startpage74en
local.contributor.affiliationWilliams, J. S.; Department of Electronic Materials Engineering, Research School of Physics, ANU College of Science and Medicine, The Australian National Universityen
local.contributor.affiliationElliman, R. G.; Department of Electronic Materials Engineering, Research School of Physics, ANU College of Science and Medicine, The Australian National Universityen
local.contributor.affiliationTan, H. H.; Department of Electronic Materials Engineering, Research School of Physics, ANU College of Science and Medicine, The Australian National Universityen
local.contributor.affiliationLever, P.; Department of Electronic Materials Engineering, Research School of Physics, ANU College of Science and Medicine, The Australian National Universityen
local.contributor.affiliationWong-Leung, J.; Department of Electronic Materials Engineering, Research School of Physics, ANU College of Science and Medicine, The Australian National Universityen
local.contributor.affiliationJagadish, C.; Department of Electronic Materials Engineering, Research School of Physics, ANU College of Science and Medicine, The Australian National Universityen
local.identifier.ariespublicationMigratedxPub15027en
local.identifier.citationvolume26en
local.identifier.puread86986a-b9ea-487d-ab01-73eebf3d8362en
local.identifier.urlhttps://www.scopus.com/pages/publications/1942485333en
local.type.statusPublisheden

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