High performance silicon solar cells using low dose phosphorus implants
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Blakers, Andrew W.
Green, Martin A.
Willison, Michael R.
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A new high performance solar cell structure, the MINP solar cell, has been developed, combining the better features of p-n junction and MIS technologies. Voltages in wafers implanted with 20 keV phosphorus ions at dose rates of 1013/cm2 have reached 661 mV (AM), 25°C), the highest reported for an implanted cell. The dose rates required are more than 200 times lower than those required for optimum performance of p-n junction cells and translate to a massive increase in implanter throughput.
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Nuclear Instruments and Methods
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