Strain relaxation during epitaxial crystallization of GexSi1-x alloy layers produced by ion-implantation
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Elliman, R. G.
Wong, W. C.
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Time-resolved reflectivity (TRR), Rutherford backscattering and channelling spectrometry (RBS-C) and transmission electron microscopy (TEM) were employed to study the in-situ crystallization behaviour and post-anneal defect structures in Ge implanted Si samples annealed at 600 °C. Particular attention was directed at Ge concentrations above the critical concentration for the growth of fully strained layers. Strain relief is shown to be correlated with a sudden reduction in crystallization velocity caused by roughening of the crystalline/amorphous interface.
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Materials Science Forum
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