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Browsing by Author Wang, Guoxiang

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Showing results 1 to 13 of 13

Advantages of Zn 1.25 Sb 2 Te 3 material for phase change memory

Author(s)Wang, Guoxiang; Nie, Qiuhua; Shen, Xiang, et al
TypeJournal article
Date Published2012
Date Created-

Crystallization behaviors of ZnxSb100-x thin films for ultralong data retention phase change memory applications

Author(s)Chen, Yimin; Wang, Guoxiang; Shen, Xiang, et al
TypeJournal article
Date Published2014
Date Created-

Crystallization characteristics of Mg-doped Ge2Sb 2Te5 films for phase change memory applications

Author(s)Fu, Jing; Shen, Xiang; Nie, Qiuhua, et al
TypeJournal article
Date Published2013
Date Created-
01_Shen_Enhanced_thermal_stability_and_2013.pdf.jpg

Enhanced thermal stability and electrical behavior of Zn-doped Sb2Te films for phase change memory application

Author(s)Shen, Xiang; Wang, Guoxiang; Wang, R. P., et al
TypeJournal article
Date Published1-Apr-2013
Date Created-

Fast crystallization and low-power amorphization of Mg-Sb-Te reversible phase-change films

Author(s)Li, Junjian; Wang, Guoxiang; Li, Jun, et al
TypeJournal article
Date Published2014
Date Created-
01 Chen Y et al The feasibility of Sn 2016.pdf.jpg

The feasibility of Sn, In, or Al doped ZnSb thin film as candidates for phase change material

Author(s)Chen, Yimin; Shen, Xiang; Wang, Guoxiang, et al
TypeJournal article
Date Published2016
Date Created-
01_Wang_Improved_phase-change_2013.pdf.jpg

Improved phase-change characteristics of Zn-doped amorphous Sb₇Te₃ films for high-speed and low-power phase change memory

Author(s)Wang, Guoxiang; Shen, Xiang; Nie, Qiuhua, et al
TypeJournal article
Date Published17-Jul-2013
Date Created-

Improved thermal and electrical properties of Al-doped Ge 2 Sb 2 Te 5 films for phase-change random access memory

Author(s)Wang, Guoxiang; Shen, Xiang; Nie, Qiuhua, et al
TypeJournal article
Date Published2012
Date Created-

Optical and structural properties of Ge-Sb-Se thin films fabricated by sputtering and thermal evaporation

Author(s)Chen, Yu; Shen, Xiang; Wang, Rongping, et al
TypeJournal article
Date Published2013
Date Created-
01_Wang_Phase_change_behaviors_of_2012.pdf.jpg

Phase change behaviors of Zn-doped Ge2Sb2Te5 films

Author(s)Wang, Guoxiang; Nie, Qiuhua; Shen, Xiang, et al
TypeJournal article
Date Published1-Aug-2012
Date Created-

Sb-rich Zn-Sb-Te phase-change materials: A candidate for the trade-off between crystallization speed and data retention

Author(s)Chen, Yimin; Wang, Guoxiang; Li, Jun, et al
TypeJournal article
Date Published2014
Date Created-

Structural evolution of Ge 2 Sb 2 Te 5 films under the 488 nm laser irradiation

Author(s)Fu, Jing; Shen, Xiang; Xu, Yinsheng, et al
TypeJournal article
Date Published2012
Date Created-
01_Wang_Te-based_chalcogenide_films_2012.pdf.jpg

Te-based chalcogenide films with high thermal stability for phase change memory

Author(s)Wang, Guoxiang; Shen, Xiang; Nie, Qiuhua, et al
TypeJournal article
Date Published4-May-2012
Date Created-
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