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Browsing by Author Svensson, B. G.

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01_Vines_Acceptor-like_deep_level_2012.pdf.jpg

Acceptor-like deep level defects in ion-implanted ZnO

Author(s)Vines, L.; Wong-Leung, Jennifer; Jagadish, C., et al
TypeJournal article
Date Published22-May-2012
Date Created-
01_Chan_Defect_formation_and_thermal_2013.pdf.jpg

Defect formation and thermal stability of H in high dose H implanted ZnO

Author(s)Chan, K. S.; Vines, L.; Johansen, K. M., et al
TypeJournal article
Date Published29-Aug-2013
Date Created-
01_Kuznetsov_Dynamic_annealing_in_ion_2003.pdf.jpg

Dynamic annealing in ion implanted SiC: Flux versus temperature dependence

Author(s)Kuznetsov, A. Yu.; Wong-Leung, Jennifer; Hallén, A., et al
TypeJournal article
Date Published1-Dec-2003
Date Created-
01_Wong-Leung_Effect_of_crystal_orientation_2003.pdf.jpg

Effect of crystal orientation on the implant profile of 60 keV Al into 4H-SiC crystals

Author(s)Wong-Leung, Jennifer; Janson, M. S.; Svensson, B. G.
TypeJournal article
Date Published1-Jun-2003
Date Created-
01_Wong-Leung_Electric_field_assisted_2008.pdf.jpg

Electric field assisted annealing and formation of prominent deep-level defect in ion-implanted n-type 4H-SiC

Author(s)Wong-Leung, Jennifer; Svensson, B. G.
TypeJournal article
Date Published9-Apr-2008
Date Created-
01_Slotte_Fluence,_flux,_and_2005.pdf.jpg

Fluence, flux, and implantation temperature dependence of ion-implantation-induced defect production in 4H–SiC

Author(s)Slotte, J.; Saarinen, K.; Janson, M. S., et al
TypeJournal article
Date Published6-Jan-2005
Date Created-
01_Pellegrino_Separation_of_vacancy_and_2001.pdf.jpg

Separation of vacancy and interstitial depth profiles in ion-implanted silicon: Experimental observation

Author(s)Pellegrino, P.; Lévêque, P.; Wong-Leung, Jennifer, et al
TypeJournal article
Date Published28-May-2001
Date Created-
01_Linnarsson_Solubility_limit_and_2001.pdf.jpg

Solubility limit and precipitate formation in Al-doped 4H-SiC epitaxial material

Author(s)Linnarsson, M K; Janson, M. S; Zimmermann, U., et al
TypeJournal article
Date Published24-Sep-2001
Date Created-
01_Lévêque_Vacancy_and_interstitial_depth_2003.pdf.jpg

Vacancy and interstitial depth profiles in ion-implanted silicon

Author(s)Lévêque, P.; Nielsen, H. Kortegaard; Pellegrino, P., et al
TypeJournal article
Date Published15-Jan-2003
Date Created-
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