Skip navigation
Skip navigation

Browsing by Author Son, Myungwoo

Or enter first few letters:  
Showing results 1 to 5 of 5
01_Liu_Co-occurrence_of_threshold_2012.pdf.jpg

Co-occurrence of threshold switching and memory switching in Pt/NbOx/Pt cells for crosspoint memory applications

Author(s)Liu, Xinjun; Sadaf, Sharif Md.; Son, Myungwoo, et al
TypeJournal article
Date Published2012
Date Created-

Diode-less bilayer oxide (WOx-NbOx) device for cross-point resistive memory applications

Author(s)Liu, Xinjun; Sadaf, Sharif Md.; Son, Myungwoo, et al
TypeJournal article
Date Published2011
Date Created-

Highly uniform and reliable resistance switching properties in bilayer WO x/NbO x RRAM devices

Author(s)Sadaf, Sharif Md.; Liu, Xinjun; Son, Myungwoo, et al
TypeJournal article
Date Published2012
Date Created-

Improvement of resistive switching uniformity by introducing a thin NbOx interface layer

Author(s)Liu, Xinjun; Sadaf, Sharif Md.; Kim, Seonghyun, et al
TypeJournal article
Date Published2012
Date Created-

Self-selective characteristics of nanoscale VOx devices for high-density ReRAM applications

Author(s)Son, Myungwoo; Liu, Xinjun; Sadaf, Sharif Md., et al
TypeJournal article
Date Published2012
Date Created-
  • previous
  • 1
  • next

Updated:  12 April 2016/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator