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Browsing by Author Rougieux, Fiacre

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Showing results 1 to 20 of 31

A Contactless Method for Determining the Carrier Mobility Sum in Silicon Wafers

Author(s)Rougieux, Fiacre; Zheng, Peiting; Thiboust, Matthieu, et al
TypeJournal article
Date Published2012
Date Created-

A Revised Equation for the Formation Rate of Iron-Boron Pairs in Silicon

Author(s)Tan, Jason; MacDonald, Daniel; Rougieux, Fiacre, et al
TypeConference paper
Date Published2010
Date CreatedSeptember 6-10 2010

Acceptor-related metastable defects in compensated n-type silicon

Author(s)Rougieux, Fiacre; Phang, Sieu Pheng; Shalav, Avi, et al
TypeConference paper
Date Published2012
Date CreatedNovember 5-9 2012

Accurate measurement of the formation rate of iron-boron pairs in silicon

Author(s)Tan, Jason; MacDonald, Daniel; Rougieux, Fiacre, et al
TypeJournal article
Date Published2011
Date Created-

Boron-Oxygen defects in compensated P-Type Czochralski Silicon

Author(s)MacDonald, Daniel; Liu, An Yao; Rougieux, Fiacre, et al
TypeConference paper
Date Published2009
Date CreatedJune 7-12 2009

Characteristics of an oxidation-induced inversion layer in compensated p-type crystalline silicon

Author(s)Rougieux, Fiacre; MacDonald, Daniel; McIntosh, Keith, et al
TypeJournal article
Date Published2010
Date Created-

Characterizing amorphous silicon, silicon nitride, and diffused layers in crystalline siliconsolarcellsusingmicro-photoluminescence spectroscopy

Author(s)Nguyen, Hieu; Rougieux, Fiacre; Yan, Di, et al
TypeJournal article
Date Published2015
Date Created-

Charge states of the reactants in the hydrogen passivation of interstitial iron in P-type crystalline silicon

Author(s)Sun, Chang; Liu, An Yao; Phang, Sieu Pheng, et al
TypeJournal article
Date Published2015
Date Created-

Compensation Engineering for Silicon Solar Cells

Author(s)Cuevas, Andres; Forster, Maxime; Rougieux, Fiacre, et al
TypeConference paper
Date Published2011
Date CreatedJune 26-July 1 2011
01_Hameiri_Contactless_determination_of_2014.pdf.jpg

Contactless determination of the carrier mobility sum in silicon wafers using combined photoluminescence and photoconductance measurements

Author(s)Hameiri, Ziv; Rougieux, Fiacre; Sinton, Ron, et al
TypeJournal article
Date Published19-Feb-2014
Date Created-

Contactless determination of the injection dependent carrier mobility sum in silicon

Author(s)Rougieux, Fiacre; Zheng, Peiting; Thiboust, Matthieu, et al
TypeConference paper
Date Published2011
Date CreatedJune 19-24 2011

Effects of Solar Cell Processing Steps on Dislocation Luminescence in Multicrystalline Silicon

Author(s)Nguyen, Hieu; Rougieux, Fiacre; Wang, Fan, et al
TypeJournal article
Date Published2015
Date Created-

Evidence for vacancy-related recombination active defects in as-grown N-type czochralski silicon

Author(s)Zheng, Peiting; Rougieux, Fiacre; Grant, Nicholas, et al
TypeJournal article
Date Published2015
Date Created-
01_Lim_Generation_and_annihilation_of_2010.pdf.jpg

Generation and annihilation of boron–oxygen-related recombination centers in compensated p- and n-type silicon

Author(s)Lim, Bianca; Rougieux, Fiacre; Macdonald, Daniel, et al
TypeJournal article
Date Published30-Nov-2010
Date Created-

High efficiency UMG silicon solar cells: impact of compensation on cell parameters

Author(s)Rougieux, Fiacre; Samundsett, Christian; Fong, Kean, et al
TypeJournal article
Date Published2016
Date Created-

Impact of compensation on the boron and oxygen-related degradation of upgraded metallurgical-grade silicon solar cells

Author(s)Forster, Maxime; Wagner, Pierre; Degoulange, Julien, et al
TypeJournal article
Date Published2013
Date Created-

Impact of minority-impurity scattering on the carrier mobility in compensated silicon

Author(s)Rougieux, Fiacre; Forster, Maxime; MacDonald, Daniel, et al
TypeConference paper
Date Published2012
Date CreatedNovember 5-9 2012

Incomplete ionization and carrier mobility in compensated p-type and n-type silicon

Author(s)Forster, Maxime; Rougieux, Fiacre; Cuevas, Andres, et al
TypeJournal article
Date Published2013
Date Created-

Influence of Annealing and Bulk Hydrogenation on Lifetime Limiting Defects in Nitrogen-Doped Floating Zone Silicon

Author(s)Rougieux, Fiacre; Grant, Nicholas; Barugkin (Qiaoke), Chog, et al
TypeJournal article
Date Published2015
Date Created-

Iron-rich particles in heavily contaminated multicrystalline silicon wafers and their response to phosphorus gettering

Author(s)MacDonald, Daniel; Phang, Sieu Pheng; Rougieux, Fiacre, et al
TypeJournal article
Date Published2012
Date Created-

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