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Browsing by Author MacDonald, Daniel

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Showing results 1 to 20 of 139

A Contactless Method for Determining the Carrier Mobility Sum in Silicon Wafers

Author(s)Rougieux, Fiacre; Zheng, Peiting; Thiboust, Matthieu, et al
TypeJournal article
Date Published2012
Date Created-

A contactless photoconductance technique to evaluate the quantum efficiency of solar cell emitters

Author(s)Cuevas, Andres; Sinton, R.A.; Kerr, Mark, et al
TypeJournal article
Date Published2002
Date Created-

A Novel Method to Determine the Majority Carrier Mobility in P-Type Multi-Crystalline Silicone

Author(s)Tan, Jason; Pascoe, Alexander; MacDonald, Daniel, et al
TypeConference paper
Date Published2009
Date CreatedSeptember 21-24 2009

A Revised Equation for the Formation Rate of Iron-Boron Pairs in Silicon

Author(s)Tan, Jason; MacDonald, Daniel; Rougieux, Fiacre, et al
TypeConference paper
Date Published2010
Date CreatedSeptember 6-10 2010

Acceptor-related metastable defects in compensated n-type silicon

Author(s)Rougieux, Fiacre; Phang, Sieu Pheng; Shalav, Avi, et al
TypeConference paper
Date Published2012
Date CreatedNovember 5-9 2012

Accurate measurement of the formation rate of iron-boron pairs in silicon

Author(s)Tan, Jason; MacDonald, Daniel; Rougieux, Fiacre, et al
TypeJournal article
Date Published2011
Date Created-

Activation energy for the hydrogenation of iron in p-type crystalline silicon wafers

Author(s)McLean, Kate; MacDonald, Daniel; Morrow, Christopher
TypeConference paper
Date Published2006
Date CreatedMay 8-12 2006

An accurate method for calibrating photoluminescence-based lifetime images on multi-crystalline silicon wafers

Author(s)Sio, Hang Cheong (Kelvin); Phang, Sieu Pheng; Trupke, T, et al
TypeJournal article
Date Published2014
Date Created-

Applications of carrier de-smearing of photoluminescence images on silicon wafers

Author(s)Phang, Sieu Pheng; Sio, Hang Cheong (Kelvin); MacDonald, Daniel
TypeJournal article
Date Published2016
Date Created-

Applications of Photoluminescence Imaging to Dopant and Carrier Concentration Measurements of Silicon Wafers

Author(s)Lim, Siew Yee; Forster, Maxime; Zhang, Xinyu, et al
TypeJournal article
Date Published2012
Date Created-

Base doping and recombination activity of impurities in crystalline silicon solar cellts

Author(s)Geerligs, Lambert Johan; MacDonald, Daniel
TypeJournal article
Date Published2004
Date Created-

Behaviour of Natural and Implanted Iron during Annealing of Multicrystalline Silicon Wafers

Author(s)MacDonald, Daniel; Roth, Thomas; Geerligs, Lambert Johan, et al
TypeJournal article
Date Published2005
Date Created-

Boron implanted, laser annealed p+ emitter for n-type interdigitated back-contact solar cells

Author(s)Yang, Xinbo; Müller, Ralph; Shalav, Avi, et al
TypeJournal article
Date Published2014
Date Created-

Boron, phosphorus and aluminum gettering of iron in crystalline silicon: Experiments and modelling

Author(s)Phang, Sieu Pheng; MacDonald, Daniel
TypeConference paper
Date Published2010
Date CreatedJune 20-25 2010

Boron-Oxygen defects in compensated P-Type Czochralski Silicon

Author(s)MacDonald, Daniel; Liu, An Yao; Rougieux, Fiacre, et al
TypeConference paper
Date Published2009
Date CreatedJune 7-12 2009

Broadening of vibrational levels in X-ray absorption spectroscopy of molecular nitrogen in compound semiconductors

Author(s)Petravic, Mladen; Gao, Qiang; Llewellyn, David, et al
TypeJournal article
Date Published2006
Date Created-

Carrier lifetime studies of deeply penetrating defects in self-ion implanted silicon

Author(s)MacDonald, Daniel; Mackel, Helmut; Doshi, Sachin, et al
TypeJournal article
Date Published2003
Date Created-

Carrier lifetime studies of strongly compensated P-type czochralski silicon

Author(s)MacDonald, Daniel; Cuevas, Andres; Di Sabatino, M, et al
TypeConference paper
Date Published2008
Date CreatedSeptember 1-4 2008

Characterisation of a Commercial Multicrystalline Silicon Solar Cell Fabrication Process

Author(s)MacDonald, Daniel; Cuevas, Andres; Kerr, Mark, et al
TypeConference paper
Date Published2000
Date CreatedNovember 28 2000

Characteristics of an oxidation-induced inversion layer in compensated p-type crystalline silicon

Author(s)Rougieux, Fiacre; MacDonald, Daniel; McIntosh, Keith, et al
TypeJournal article
Date Published2010
Date Created-

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