Browsing by Author Liu, Xinjun
Showing results 1 to 20 of 61
All-ZnO-based transparent resistance random access memory device fully fabricated at room temperature
Author(s) | Cao, Xun; Li, Xiaomin; Gao, Xiangdong, et al |
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Type | Journal article |
Date Published | 2011 |
Date Created | - |
Asymmetric bipolar resistive switching in solution-processed Pt/TiO 2/W devices
Author(s) | Biju, Kuyyadi P.; Liu, Xinjun; Bourim, El Mostafa, et al |
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Type | Journal article |
Date Published | 2010 |
Date Created | - |
Bipolar resistance switching in the Pt/WOx/W nonvolatile memory devices
Author(s) | Biju, Kuyyadi P.; Liu, Xinjun; Kim, Seonghyun, et al |
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Type | Journal article |
Date Published | 2011 |
Date Created | - |
Bipolar resistance switching property of Al-Ag/La0.7Ca 0.3MnO3/Pt sandwiches
Author(s) | Liu, Xinjun; Li, Xiaomin; Yu, Weidong, et al |
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Type | Journal article |
Date Published | 2009 |
Date Created | - |
Bipolar resistive switching properties of microcrystalline TiO2 thin films deposited by pulsed laser deposition
Author(s) | Cao, Xun; Li, Xiaomin; Yu, Weidong, et al |
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Type | Journal article |
Date Published | 2009 |
Date Created | - |
Change of the magnetic moment and specific heat of La0.9Ca0.1MnO3 after heat treatment in oxygen and argon
Author(s) | Wu, Z H; Wang, Qun; Liu, Xinjun, et al |
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Type | Journal article |
Date Published | 2009 |
Date Created | - |
Characterization of resistive switching states in W/Pr0.7Ca 0.3MnO3 for a submicron (f250 nm) via-hole structure
Author(s) | Siddik, Manzar; Biju, Kuyyadi P.; Liu, Xinjun, et al |
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Type | Journal article |
Date Published | 2011 |
Date Created | - |
Co-occurrence of threshold switching and memory switching in Pt/NbOx/Pt cells for crosspoint memory applications
Author(s) | Liu, Xinjun; Sadaf, Sharif Md.; Son, Myungwoo, et al |
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Type | Journal article |
Date Published | 2012 |
Date Created | - |
Coexistence of filamentary and homogeneous resistive switching in graded WOx thin films
Author(s) | Biju, Kuyyadi P.; Liu, Xinjun; Kim, Seonghyun, et al |
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Type | Journal article |
Date Published | 2011 |
Date Created | - |
Complementary resistive switching in niobium oxide-based resistive memory devices
Author(s) | Liu, Xinjun; Sadaf, Sharif Md.; Park, Sangsu, et al |
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Type | Journal article |
Date Published | 2013 |
Date Created | - |
Diode-less bilayer oxide (WOx-NbOx) device for cross-point resistive memory applications
Author(s) | Liu, Xinjun; Sadaf, Sharif Md.; Son, Myungwoo, et al |
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Type | Journal article |
Date Published | 2011 |
Date Created | - |
Effect of defect content on the unipolar resistive switching characteristics of ZnO thin film memory devices
Author(s) | Zhang, Feng; Liu, Xinjun; Li, Xiaomin, et al |
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Type | Journal article |
Date Published | 2012 |
Date Created | - |
Effect of Microstructure on Dielectric Breakdown in Amorphous HfO2 Films
Author(s) | Nandi, Sanjoy; Llewellyn, David; Belay, Kidane, et al |
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Type | Journal article |
Date Published | 2014 |
Date Created | - |
Effects of the compliance current on the resistive switching behavior of TiO2 thin films
Author(s) | Cao, Xun; Li, Xiaomin; Gao, Xiangdong, et al |
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Type | Journal article |
Date Published | 2009 |
Date Created | - |
Electric-field-induced resistance behavior in Ag/Pr1-x Ca x MnO3/Pt (x=0,0.3,1.0) heterostructures
Author(s) | Wang, Qun; Chen, Lidong; Liu, Xinjun, et al |
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Type | Journal article |
Date Published | 2009 |
Date Created | - |
Engineering electrodeposited ZnO films and their memristive switching performance
Author(s) | Zoolfakar, Ahmad Sabirin![]() |
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Type | Journal article |
Date Published | 2013 |
Date Created | - |
Fabrication and resistance-switching behaviors of NiO thin films by thermal oxidation of evaporated Ni films
Author(s) | Cao, Xun; Li, Xiaomin; Yu, Weidong, et al |
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Type | Journal article |
Date Published | 2009 |
Date Created | - |
Ferroelectric polarization effect on Al-Nb codoped Pb(Zr 0.52Ti0.48)O3/Pr0.7Ca0.3MnO3 heterostructure resistive memory
Author(s) | Bourim, El Mostafa; Park, Sangsoo; Liu, Xinjun, et al |
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Type | Journal article |
Date Published | 2011 |
Date Created | - |
Ferroelectricity-induced resistive switching in Pb(Zr 0.52Ti0.48)O3/Pr0.7Ca 0.3MnO3/Nb-doped SrTiO3 epitaxial heterostructure
Author(s) | Sadaf, Sharif Md.; Bourim, El Mostafa; Liu, Xinjun, et al |
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Type | Journal article |
Date Published | 2012 |
Date Created | - |
Filament-type resistive switching in homogeneous Bi-layer Pr0.7Ca0.3MnO3 thin film memory devices
Author(s) | Liu, Xinjun; Biju, Kuyyadi P.; Bourim, El Mostafa, et al |
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Type | Journal article |
Date Published | 2011 |
Date Created | - |
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