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Browsing by Author Liu, Xinjun

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Showing results 1 to 20 of 62

All-ZnO-based transparent resistance random access memory device fully fabricated at room temperature

Author(s)Cao, Xun; Li, Xiaomin; Gao, Xiangdong, et al
TypeJournal article
Date Published2011
Date Created-

Asymmetric bipolar resistive switching in solution-processed Pt/TiO 2/W devices

Author(s)Biju, Kuyyadi P.; Liu, Xinjun; Bourim, El Mostafa, et al
TypeJournal article
Date Published2010
Date Created-

Bipolar resistance switching in the Pt/WOx/W nonvolatile memory devices

Author(s)Biju, Kuyyadi P.; Liu, Xinjun; Kim, Seonghyun, et al
TypeJournal article
Date Published2011
Date Created-

Bipolar resistance switching property of Al-Ag/La0.7Ca 0.3MnO3/Pt sandwiches

Author(s)Liu, Xinjun; Li, Xiaomin; Yu, Weidong, et al
TypeJournal article
Date Published2009
Date Created-

Bipolar resistive switching properties of microcrystalline TiO2 thin films deposited by pulsed laser deposition

Author(s)Cao, Xun; Li, Xiaomin; Yu, Weidong, et al
TypeJournal article
Date Published2009
Date Created-

Change of the magnetic moment and specific heat of La0.9Ca0.1MnO3 after heat treatment in oxygen and argon

Author(s)Wu, Z H; Wang, Qun; Liu, Xinjun, et al
TypeJournal article
Date Published2009
Date Created-

Characterization of resistive switching states in W/Pr0.7Ca 0.3MnO3 for a submicron (f250 nm) via-hole structure

Author(s)Siddik, Manzar; Biju, Kuyyadi P.; Liu, Xinjun, et al
TypeJournal article
Date Published2011
Date Created-

Co-occurrence of threshold switching and memory switching in Pt/NbOx/Pt cells for crosspoint memory applications

Author(s)Liu, Xinjun; Sadaf, Sharif Md.; Son, Myungwoo, et al
TypeJournal article
Date Published2012
Date Created-

Coexistence of filamentary and homogeneous resistive switching in graded WOx thin films

Author(s)Biju, Kuyyadi P.; Liu, Xinjun; Kim, Seonghyun, et al
TypeJournal article
Date Published2011
Date Created-

Complementary resistive switching in niobium oxide-based resistive memory devices

Author(s)Liu, Xinjun; Sadaf, Sharif Md.; Park, Sangsu, et al
TypeJournal article
Date Published2013
Date Created-

Diode-less bilayer oxide (WOx-NbOx) device for cross-point resistive memory applications

Author(s)Liu, Xinjun; Sadaf, Sharif Md.; Son, Myungwoo, et al
TypeJournal article
Date Published2011
Date Created-

Effect of defect content on the unipolar resistive switching characteristics of ZnO thin film memory devices

Author(s)Zhang, Feng; Liu, Xinjun; Li, Xiaomin, et al
TypeJournal article
Date Published2012
Date Created-

Effect of Microstructure on Dielectric Breakdown in Amorphous HfO2 Films

Author(s)Nandi, Sanjoy; Llewellyn, David; Belay, Kidane, et al
TypeJournal article
Date Published2014
Date Created-

Effects of the compliance current on the resistive switching behavior of TiO2 thin films

Author(s)Cao, Xun; Li, Xiaomin; Gao, Xiangdong, et al
TypeJournal article
Date Published2009
Date Created-

Electric-field-induced resistance behavior in Ag/Pr1-x Ca x MnO3/Pt (x=0,0.3,1.0) heterostructures

Author(s)Wang, Qun; Chen, Lidong; Liu, Xinjun, et al
TypeJournal article
Date Published2009
Date Created-

Engineering electrodeposited ZnO films and their memristive switching performance

Author(s)Zoolfakar, Ahmad Sabirin; Kadir, Rosmalini Ab; Rani, Rozina Abdul, et al
TypeJournal article
Date Published2013
Date Created-

Fabrication and resistance-switching behaviors of NiO thin films by thermal oxidation of evaporated Ni films

Author(s)Cao, Xun; Li, Xiaomin; Yu, Weidong, et al
TypeJournal article
Date Published2009
Date Created-

Ferroelectric polarization effect on Al-Nb codoped Pb(Zr 0.52Ti0.48)O3/Pr0.7Ca0.3MnO3 heterostructure resistive memory

Author(s)Bourim, El Mostafa; Park, Sangsoo; Liu, Xinjun, et al
TypeJournal article
Date Published2011
Date Created-

Ferroelectricity-induced resistive switching in Pb(Zr 0.52Ti0.48)O3/Pr0.7Ca 0.3MnO3/Nb-doped SrTiO3 epitaxial heterostructure

Author(s)Sadaf, Sharif Md.; Bourim, El Mostafa; Liu, Xinjun, et al
TypeJournal article
Date Published2012
Date Created-

Filament-type resistive switching in homogeneous Bi-layer Pr0.7Ca0.3MnO3 thin film memory devices

Author(s)Liu, Xinjun; Biju, Kuyyadi P.; Bourim, El Mostafa, et al
TypeJournal article
Date Published2011
Date Created-

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