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Browsing by Author Linnarsson, M K

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Showing results 1 to 7 of 7

A Comparison of Extended Defect Formation Induced by Ion Implantation in (0001) and (1120)4H-SiC

Author(s)Wong-Leung, Yin-Yin (Jennifer); Linnarsson, M K; Svensson, Bengt Gunnar
TypeJournal article
Date Published2003
Date Created-

Formation of Precipitates in Heavily Boron Doped 4H-SiC

Author(s)Linnarsson, M K; Janson, M S; Nordell, N, et al
TypeJournal article
Date Published2006
Date Created-

Ion implantation in 4H-SiC

Author(s)Wong-Leung, Yin-Yin (Jennifer); Janson, M S; Kuznetsov, A Yu, et al
TypeJournal article
Date Published2008
Date Created-

Ion-Implantation-Induced Extended Defect Formation in (0001) and (1120) 4H-SiC

Author(s)Wong-Leung, Yin-Yin (Jennifer); Linnarsson, M K; Svensson, Bengt Gunnar, et al
TypeJournal article
Date Published2005
Date Created-

Mn implantation for new applications of 4H-SiC

Author(s)Linnarsson, M K; Wong-Leung, Yin-Yin (Jennifer); Hallen, A, et al
TypeConference paper
Date Published2012
Date CreatedSeptember 11-16 2011
01_Linnarsson_Solubility_limit_and_2001.pdf.jpg

Solubility limit and precipitate formation in Al-doped 4H-SiC epitaxial material

Author(s)Linnarsson, M K; Janson, M. S; Zimmermann, U., et al
TypeJournal article
Date Published24-Sep-2001
Date Created-

Solubility Limits of Dopants in 4H-SiC

Author(s)Linnarsson, M K; Zimmermann, U; Wong-Leung, Yin-Yin (Jennifer), et al
TypeJournal article
Date Published2003
Date Created-
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