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Browsing by Author Hwang, Hyunsang

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Showing results 1 to 20 of 25
01_Biju_Asymmetric_bipolar_resistive_2010.pdf.jpg

Asymmetric bipolar resistive switching in solution-processed Pt/TiO 2/W devices

Author(s)Biju, Kuyyadi P.; Liu, Xinjun; Bourim, El Mostafa, et al
TypeJournal article
Date Published2010
Date Created-

Bipolar resistance switching in the Pt/WOx/W nonvolatile memory devices

Author(s)Biju, Kuyyadi P.; Liu, Xinjun; Kim, Seonghyun, et al
TypeJournal article
Date Published2011
Date Created-
01_Siddik_Characterization_of_resistive_2011.pdf.jpg

Characterization of resistive switching states in W/Pr0.7Ca 0.3MnO3 for a submicron (f250 nm) via-hole structure

Author(s)Siddik, Manzar; Biju, Kuyyadi P.; Liu, Xinjun, et al
TypeJournal article
Date Published2011
Date Created-
01_Liu_Co-occurrence_of_threshold_2012.pdf.jpg

Co-occurrence of threshold switching and memory switching in Pt/NbOx/Pt cells for crosspoint memory applications

Author(s)Liu, Xinjun; Sadaf, Sharif Md.; Son, Myungwoo, et al
TypeJournal article
Date Published2012
Date Created-

Coexistence of filamentary and homogeneous resistive switching in graded WOx thin films

Author(s)Biju, Kuyyadi P.; Liu, Xinjun; Kim, Seonghyun, et al
TypeJournal article
Date Published2011
Date Created-

Complementary resistive switching in niobium oxide-based resistive memory devices

Author(s)Liu, Xinjun; Sadaf, Sharif Md.; Park, Sangsu, et al
TypeJournal article
Date Published2013
Date Created-

Diode-less bilayer oxide (WOx-NbOx) device for cross-point resistive memory applications

Author(s)Liu, Xinjun; Sadaf, Sharif Md.; Son, Myungwoo, et al
TypeJournal article
Date Published2011
Date Created-

Ferroelectric polarization effect on Al-Nb codoped Pb(Zr 0.52Ti0.48)O3/Pr0.7Ca0.3MnO3 heterostructure resistive memory

Author(s)Bourim, El Mostafa; Park, Sangsoo; Liu, Xinjun, et al
TypeJournal article
Date Published2011
Date Created-

Ferroelectricity-induced resistive switching in Pb(Zr 0.52Ti0.48)O3/Pr0.7Ca 0.3MnO3/Nb-doped SrTiO3 epitaxial heterostructure

Author(s)Sadaf, Sharif Md.; Bourim, El Mostafa; Liu, Xinjun, et al
TypeJournal article
Date Published2012
Date Created-

Filament-type resistive switching in homogeneous Bi-layer Pr0.7Ca0.3MnO3 thin film memory devices

Author(s)Liu, Xinjun; Biju, Kuyyadi P.; Bourim, El Mostafa, et al
TypeJournal article
Date Published2011
Date Created-

Highly asymmetric bipolar resistive switching in solution-processed Pt/TiO2/W devices for cross-point application

Author(s)Biju, Kuyyadi P.; Liu, Xinjun; Shin, Jungho, et al
TypeJournal article
Date Published2011
Date Created-

Highly uniform and reliable resistance switching properties in bilayer WO x/NbO x RRAM devices

Author(s)Sadaf, Sharif Md.; Liu, Xinjun; Son, Myungwoo, et al
TypeJournal article
Date Published2012
Date Created-

Improved resistive switching properties in Pt/Pr0.7Ca 0.3MnO3/Y2O3-stabilized ZrO 2/W via-hole structures

Author(s)Liu, Xinjun; Biju, Kuyyadi P.; Park, Sangsu, et al
TypeJournal article
Date Published2011
Date Created-

Improved resistive switching properties of solution processed ti O 2 thin films

Author(s)Biju, Kuyyadi P.; Liu, Xinjun; Bourim, El Mostafa, et al
TypeJournal article
Date Published2010
Date Created-

Improved resistive switching properties of solution-processed TiOx film by incorporating atomic layer deposited TiO2 layer

Author(s)Kim, Insung; Jung, Seungjae; Shin, Jungho, et al
TypeJournal article
Date Published2011
Date Created-

Improvement of resistive switching uniformity by introducing a thin NbOx interface layer

Author(s)Liu, Xinjun; Sadaf, Sharif Md.; Kim, Seonghyun, et al
TypeJournal article
Date Published2012
Date Created-

Low programming voltage resistive switching in reactive metal/polycrystalline Pr0.7Ca0.3MnO3 devices

Author(s)Liu, Xinjun; Biju, Kuyyadi P.; Bourim, El Mostafa, et al
TypeJournal article
Date Published2010
Date Created-

Low-power and controllable memory window in Pt/Pr 0.7Ca 0.3MnO 3/yttria-stabilized zirconia/w resistive random-access memory devices

Author(s)Liu, Xinjun; Biju, Kuyyadi P.; Park, Jubong, et al
TypeJournal article
Date Published2012
Date Created-

Memristive switching behavior in Pr0.7Ca0.3MnO3 by incorporating an oxygen-deficient layer

Author(s)Park, Sangsu; Jung, Seungjae; Siddik, Manzar, et al
TypeJournal article
Date Published2011
Date Created-

Parallel memristive filaments model applicable to bipolar and filamentary resistive switching

Author(s)Liu, Xinjun; Biju, Kuyyadi P.; Lee, Joonmyoung, et al
TypeJournal article
Date Published2011
Date Created-

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