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Browsing by Author Forster, Maxime

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Showing results 1 to 8 of 8

Applications of Photoluminescence Imaging to Dopant and Carrier Concentration Measurements of Silicon Wafers

Author(s)Lim, Siew Yee; Forster, Maxime; Zhang, Xinyu, et al
TypeJournal article
Date Published2012
Date Created-

Compensation Engineering for Silicon Solar Cells

Author(s)Cuevas, Andres; Forster, Maxime; Rougieux, Fiacre, et al
TypeConference paper
Date Published2011
Date CreatedJune 26-July 1 2011

Compensation engineering for uniform n-type silicon ingots

Author(s)Forster, Maxime; Dehestru, B; Thomas, A, et al
TypeJournal article
Date Published2013
Date Created-

Estimation of solidification interface shapes in a boron-phosphorus compensated multicrystalline silicon ingot via photoluminescence imaging

Author(s)Lim, Siew Yee; Forster, Maxime; MacDonald, Daniel
TypeJournal article
Date Published2013
Date Created-

High efficiency UMG silicon solar cells: impact of compensation on cell parameters

Author(s)Rougieux, Fiacre; Samundsett, Christian; Fong, Kean, et al
TypeJournal article
Date Published2016
Date Created-

Impact of compensation on the boron and oxygen-related degradation of upgraded metallurgical-grade silicon solar cells

Author(s)Forster, Maxime; Wagner, Pierre; Degoulange, Julien, et al
TypeJournal article
Date Published2013
Date Created-

Incomplete ionization and carrier mobility in compensated p-type and n-type silicon

Author(s)Forster, Maxime; Rougieux, Fiacre; Cuevas, Andres, et al
TypeJournal article
Date Published2013
Date Created-

Recombination Activity and Impact of the Boron-Oxygen-Related Defect in Compensated n-Type Silicon

Author(s)Rougieux, Fiacre; Forster, Maxime; MacDonald, Daniel, et al
TypeJournal article
Date Published2011
Date Created-
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