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Browsing by Author Deenapanray, Prakash

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A Deep Level Transient Spectroscopy Study of Vacancy-related Defect Profiles in Channeled Ion Implanted Silicon

Author(s)Lay, M D H; McCallum, Jeffrey C; de Azevedo, Gustavo, et al
TypeConference paper
Date Published2003
Date CreatedDecember 11 2002

Angular and Energy Dependence of the Ion Beam Oxidation of Si Using Oxygen Ions from a Duoplasmatron Source

Author(s)Deenapanray, Prakash; Petravic, Mladen
TypeJournal article
Date Published1999
Date Created-

Atomic Force Microscopy and High-Resolution RBS Investigation of the Surface Modification of Magnetron Sputter-Etched Si(111) in an Argon Plasma at Different Pressures

Author(s)Deenapanray, Prakash; Hillie, K; Demangel, Caroline, et al
TypeJournal article
Date Published1999
Date Created-

Atomic Relocation of Fast Diffusers in Impurity-free Disordered P-type GaAs

Author(s)Coleman, Victoria A; Deenapanray, Prakash; Jagadish, Chennupati, et al
TypeConference paper
Date Published2003
Date CreatedDecember 11 2002

Broadening of vibrational levels in X-ray absorption spectroscopy of molecular nitrogen in compound semiconductors

Author(s)Petravic, Mladen; Gao, Qiang; Llewellyn, David, et al
TypeJournal article
Date Published2006
Date Created-

Characterization of defects created in Cz and epitaxial Si doped with Ga or B using Laplace-DLTS

Author(s)Deenapanray, Prakash; Nyamhere, Cloud; Auret, Francois D, et al
TypeJournal article
Date Published2006
Date Created-

Chemical States of Nitrogen in ZnO Studied by near-edge X-ray Absorption Fine Structure and Core-level Photoemission Spectroscopies

Author(s)Petravic, Mladen; Deenapanray, Prakash; Coleman, Victoria A, et al
TypeJournal article
Date Published2006
Date Created-

Core-level photoemission and near-edge x-ray absorption fine-structure studies of GaN surface under low-energy ion bombardment

Author(s)Petravic, Mladen; Deenapanray, Prakash; Coleman, Victoria A, et al
TypeJournal article
Date Published2004
Date Created-

Deep Level Properties of Erbium Implanted Epitaxially Grown SiGe

Author(s)Mamor, M; Auret, Francois D; Goodman, S, et al
TypeJournal article
Date Published1999
Date Created-

Deep Level Transient Spectroscopy of Defects Introduced in Si and SiGe by Low Energy Particles

Author(s)Deenapanray, Prakash; Auret, F Danie
TypeJournal article
Date Published2003
Date Created-

Deep-level transient spectroscopy study of electron traps in rapid thermally annealed SiO2-capped n-type GaAs layers grown by metalorganic chemical vapour deposition

Author(s)Deenapanray, Prakash; Lay, M; Aberg, D, et al
TypeJournal article
Date Published2001
Date Created-

Defect Engineering and Atomic Relocation Processes in Impurity-Free Disordered GaAs and AIGaAs

Author(s)Deenapanray, Prakash; Krispin, M; Meyer, W E, et al
TypeConference paper
Date Published2004
Date CreatedDecember 1 2003

Defect engineering in annealed n-type GaAs epilayers using SiO 2 /Si 3 N 4 stacking layers

Author(s)Deenapanray, Prakash; Martin, Anthony H; Jagadish, Chennupati
TypeJournal article
Date Published2001
Date Created-

Defect Evolution in Annealed p-type GaAsN Epilayers Grown by Metalorganic Chemical Vapour Deposition

Author(s)Gao, Qiang; Jagadish, Chennupati; Deenapanray, Prakash, et al
TypeJournal article
Date Published2003
Date Created-

Defective Crystal Recovered from the Crystallization of Potassium-doped Amorphous Silicon Films

Author(s)Liu, A C Y; McCallum, Jeffrey C; Deenapanray, Prakash
TypeJournal article
Date Published2003
Date Created-

DLTS of low-energy hydrogen ion implanted in n-Si

Author(s)Deenapanray, Prakash
TypeJournal article
Date Published2003
Date Created-

Effect of Stress on Impurity-free quantum well intermixing

Author(s)Deenapanray, Prakash; Jagadish, Chennupati
TypeJournal article
Date Published2001
Date Created-

Electic-Field-Enhanced Emission and Annealing Behaviour of Electron Traps Introduced in n-Si by Low-Energy He Ion Bombardment

Author(s)Deenapanray, Prakash; Meyer, W E; Auret, Francois D
TypeJournal article
Date Published1999
Date Created-

Electrical Characterization and Annealing Properties of Electrically Active Defects Introduced in n-Si During Sputter Etching in an Ar-plasma

Author(s)Deenapanray, Prakash; Auret, Francois D; Myburg, G
TypeJournal article
Date Published1999
Date Created-

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