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Browsing by Author Cuevas, Andres

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Showing results 1 to 20 of 194

A comparison of models to optimize Partial Rear Contact solar cells

Author(s)Cuevas, Andres; Yan, Di; Haase, Felix, et al
TypeJournal article
Date Published2013
Date Created-

A Contactless Method for Determining the Carrier Mobility Sum in Silicon Wafers

Author(s)Rougieux, Fiacre; Zheng, Peiting; Thiboust, Matthieu, et al
TypeJournal article
Date Published2012
Date Created-

A contactless photoconductance technique to evaluate the quantum efficiency of solar cell emitters

Author(s)Cuevas, Andres; Sinton, R.A.; Kerr, Mark, et al
TypeJournal article
Date Published2002
Date Created-

A Novel Method to Determine the Majority Carrier Mobility in P-Type Multi-Crystalline Silicone

Author(s)Tan, Jason; Pascoe, Alexander; MacDonald, Daniel, et al
TypeConference paper
Date Published2009
Date CreatedSeptember 21-24 2009

A quasi-steady-state open-circuit voltage method for solar cell characterization

Author(s)Sinton, R.A.; Cuevas, Andres
TypeConference paper
Date Published2000
Date CreatedMay 1 2000

A Revised Equation for the Formation Rate of Iron-Boron Pairs in Silicon

Author(s)Tan, Jason; MacDonald, Daniel; Rougieux, Fiacre, et al
TypeConference paper
Date Published2010
Date CreatedSeptember 6-10 2010

Accurate measurement of the formation rate of iron-boron pairs in silicon

Author(s)Tan, Jason; MacDonald, Daniel; Rougieux, Fiacre, et al
TypeJournal article
Date Published2011
Date Created-

Amorphous silicon passivated contacts for diffused junction silicon solar cells

Author(s)Bullock, James; Yan, Di; Wan, Yimao, et al
TypeJournal article
Date Published2014
Date Created-

Analytical and computer modelling of suns-Voc silicon solar cell characteristics

Author(s)Cuevas, Andres; Tan, Jason
TypeJournal article
Date Published2009
Date Created-

Analyzing Back Contacts of Silicon Solar Cells by Suns-Voc-Measurement at High Illumination Densities

Author(s)Glunz, Stefan; Nekarda, J; Mackel, Helmut, et al
TypeConference paper
Date Published2007
Date CreatedSeptember 3-7 2007

Application of junction capacitance measurements to the characterization of solar cells

Author(s)Recart, Federico; Cuevas, Andres
TypeJournal article
Date Published2006
Date Created-

Applications of Photoluminescence Imaging to Dopant and Carrier Concentration Measurements of Silicon Wafers

Author(s)Lim, Siew Yee; Forster, Maxime; Zhang, Xinyu, et al
TypeJournal article
Date Published2012
Date Created-
vien98.pdf.jpg

Applications of the quasi-steady-state photoconductance technique

Author(s)Cuevas, Andres; Stocks, Matthew; Macdonald, D, et al
TypeConference paper
Date Published1998
Date Created1998

Behaviour of Natural and Implanted Iron during Annealing of Multicrystalline Silicon Wafers

Author(s)MacDonald, Daniel; Roth, Thomas; Geerligs, Lambert Johan, et al
TypeJournal article
Date Published2005
Date Created-
01_MacDonald_Boron-Oxygen_defects_in_2009.pdf.jpg

Boron-Oxygen defects in compensated P-Type Czochralski Silicon

Author(s)MacDonald, Daniel; Liu, An Yao; Rougieux, Fiacre, et al
TypeConference paper
Date Published2009
Date CreatedJune 7-12 2009
boronapl.pdf.jpg

Boron-related minority-carrier trapping centers in p-type silicon

Author(s)Macdonald, D; Kerr, Mark John; Cuevas, Andres
TypeJournal article
Date Published1999
Date Created1999
Cuevas_Capacitive2005.pdf.jpg

Capacitive effects in quasi-steady-state voltage and lifetime measurements of silicon devices

Author(s)Cuevas, Andres; Recart, F
TypeJournal article
Date Published11-Oct-2005
Date Created-
Macdonald_Capture2001.pdf.jpg

Capture cross sections of the acceptor level of iron-boron pairs in p-type silicon by injection-level dependent lifetime measurements

Author(s)Macdonald, D; Cuevas, Andres; Wong-Leung, Jennifer
TypeJournal article
Date Published15-Jun-2001
Date Created-

Capturing the spectural response of solar cells with a quasi-steady-state, large-signal technique

Author(s)Mackel, Helmut; Cuevas, Andres
TypeJournal article
Date Published2006
Date Created-

Carrier lifetime studies of deeply penetrating defects in self-ion implanted silicon

Author(s)MacDonald, Daniel; Mackel, Helmut; Doshi, Sachin, et al
TypeJournal article
Date Published2003
Date Created-

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