Skip navigation
Skip navigation

Browsing by Author Cockayne, David John Hugh

Or enter first few letters:  
Showing results 1 to 15 of 15

Carrier transfer between V-grooved quantum wire and vertical quantum well

Author(s)Lu, Wei; Liu, Qiu Xiang; Li, Zhong Hui, et al
TypeJournal article
Date Published2001
Date Created-

Defects Formed During 1 MeV Si Ion-Irradiation of GeSi/Si Strained Layer Heterostructures at Elevated Temperature

Author(s)Glasko, J; Elliman, Robert; Zou, Jin, et al
TypeJournal article
Date Published1999
Date Created-

Dislocation-induced changes in quantum dots: step alignment and radiative emission

Author(s)Leon, R; Okuno, J; Lawton, R, et al
TypeJournal article
Date Published1999
Date Created-
Liao_Indium1999.pdf.jpg

Indium segregation and enrichment in coherent InxGa1-xAs/GaAs quantum dots

Author(s)Liao, X Z; Zou, Jin; Cockayne, David John Hugh, et al
TypeJournal article
Date Published1999
Date Created-

Inhibited carrier transfer in ensembles of isolated quantum dots

Author(s)Lobo, C; Leon, R; Marcinkevicius, S, et al
TypeJournal article
Date Published1999
Date Created-

Ion implantation in 4H-SiC

Author(s)Wong-Leung, Jennifer; Janson, M S; Kuznetsov, A Yu, et al
TypeJournal article
Date Published2008
Date Created-

Ion-Implantation-Induced Extended Defect Formation in (0001) and (1120) 4H-SiC

Author(s)Wong-Leung, Jennifer; Linnarsson, M K; Svensson, Bengt Gunnar, et al
TypeJournal article
Date Published2005
Date Created-
01_Borisenko_Medium-range_order_in_2011.pdf.jpg

Medium-range order in amorphous silicon investigated by constrained structural relaxation of two-body and four-body electron diffraction data

Author(s)Borisenko, K. B.; Haberl, Bianca; Liu, A. C. Y., et al
TypeJournal article
Date Published2011
Date Created-
01_Zhao_Optical_properties_of_arsenic_2000.pdf.jpg

Optical properties of arsenic ions implanted GaAs/AlGaAs V-grooved quantum wires

Author(s)Zhao, Q X; Willander, M; Lu, Wei, et al
TypeJournal article
Date Published2000
Date Created-

Optical transition in infrared photodetector based on V-groove Al 0.5 Ga 0.5 As/GaAs multiple quantum wire

Author(s)Fu, Y; Willander, M; Liu, Qiu Xiang, et al
TypeJournal article
Date Published2001
Date Created-

Role of Implantation-Induced Defects on the Response Time of Semiconductor Saturable Absorbers

Author(s)Jagadish, Chennupati; Lederer, Maximilian; Luther-Davies, Barry, et al
TypeJournal article
Date Published1999
Date Created-

Spatially resolved luminescence investigation of AlGaAs/GaAs single quantum wire modified by selective implantation and annealing

Author(s)Liu, Qiu Xiang; Lu, W; Li, Zhong Hui, et al
TypeJournal article
Date Published1999
Date Created-

Strain effect in a GaAs-In0.25Ga0.75As-Al0.5Ga0.5As asymmetric quantum wire

Author(s)Fu, Y; Willander, M; Lu, Wei, et al
TypeJournal article
Date Published2000
Date Created-

Transmission Electron Microscopy Characterization of Secondary Defects Created by MeV Si, Ge, and Sn Implantation in Silicon

Author(s)Wong-Leung, Jennifer; Fatima, S; Jagadish, Chennupati, et al
TypeJournal article
Date Published2000
Date Created-

Wavelength shifting of adjacent quantum wells in V-groove quantum wire structure by selective implantation and annealing

Author(s)Liu, Qiu Xiang; Lu, Wei; Chen, X S, et al
TypeJournal article
Date Published2000
Date Created-
  • previous
  • 1
  • next

Updated:  12 April 2016/ Responsible Officer:  University Librarian/ Page Contact:  Library Systems & Web Coordinator