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Browsing by Author Bothe, Karsten

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Showing results 1 to 13 of 13
01_Birkholz_Electronic_properties_of_2005.pdf.jpg

Electronic properties of iron-boron pairs in crystalline silicon by temperature- and injection-level-dependent lifetime measurements

Author(s)Birkholz, Jens E.; Bothe, Karsten; Macdonald, Daniel, et al
TypeJournal article
Date Published2005
Date Created-

Electronically Stimulated Degradation of Crystalline Silicon Solar Cells

Author(s)Schmidt, Jan; Bothe, Karsten; MacDonald, Daniel, et al
TypeConference paper
Date Published2005
Date CreatedMarch 28 2005

Electronically stimulated degradation of silicon solar cells

Author(s)Schmidt, Jan; Bothe, Karsten; MacDonald, Daniel, et al
TypeJournal article
Date Published2006
Date Created-

Experimental Determination of the Uncertainty of the Absorption Coefficient of Crystalline Silicon

Author(s)Schinke, Carsten; Peest, P. Christian; Bothe, Karsten, et al
TypeJournal article
Date Published2015
Date Created-
01_Macdonald_Formation_rates_of_2005.pdf.jpg

Formation rates of iron-acceptor pairs in crystalline silicon

Author(s)Macdonald, Daniel; Roth, Thomas; Deenapanray, Prakash N. K., et al
TypeJournal article
Date Published19-Oct-2005
Date Created-
01_Lim_Generation_and_annihilation_of_2010.pdf.jpg

Generation and annihilation of boron–oxygen-related recombination centers in compensated p- and n-type silicon

Author(s)Lim, Bianca; Rougieux, Fiacre; Macdonald, Daniel, et al
TypeJournal article
Date Published30-Nov-2010
Date Created-

Imaging of the interstitial iron concentration in B-doped c-Si based on time-dependent photoluminescence imaging

Author(s)Herlufsen, Sandra; MacDonald, Daniel; Bothe, Karsten, et al
TypeConference paper
Date Published2012
Date CreatedSeptember 24-28 2012

Imaging of the interstitial iron concentration in crystalline silicon by measuring the dissociation rate of iron-boron pairs

Author(s)Herlufsen, Sandra; MacDonald, Daniel; Bothe, Karsten, et al
TypeJournal article
Date Published2012
Date Created-
01_Lim_Impact_of_dopant_compensation_2009.pdf.jpg

Impact of dopant compensation on the deactivation of boron-oxygen recombination centers in crystalline silicon

Author(s)Lim, Bianca; Liu, An; Macdonald, Daniel, et al
TypeJournal article
Date Published10-Dec-2009
Date Created-

Lifetime degradation mechanism in boron-doped Czochralski silicon

Author(s)Voronkov, V; Falster , R; Batunina, A, et al
TypeConference paper
Date Published2011
Date CreatedSeptember 13-17 2010

Mechanisms of light-induced degradation in mono- and multicrystalline silicon solar cells

Author(s)Schmidt, Jan; Bothe, Karsten; MacDonald, Daniel, et al
TypeConference paper
Date Published2005
Date CreatedJune 6 2005

Recombination parameters of iron-boron pairs in boron doped crystalline silicon

Author(s)Birkholz, Jens E; Bothe, Karsten; MacDonald, Daniel, et al
TypeConference paper
Date Published2005
Date CreatedJune 6 2005

Uncertainty analysis for the coefficient of band-to-band absorption of crystalline silicon

Author(s)Schinke, Carsten; Peest, P. Christian; Schmidt, Jan, et al
TypeJournal article
Date Published2015
Date Created-
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