Browsing by Author Wu, Liangcai
Showing results 1 to 7 of 7
Advantages of Zn 1.25 Sb 2 Te 3 material for phase change memory
Author(s) | Wang, Guoxiang; Nie, Qiuhua; Shen, Xiang, et al |
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Type | Journal article |
Date Published | 2012 |
Date Created | - |
Crystallization behaviors of ZnxSb100-x thin films for ultralong data retention phase change memory applications
Author(s) | Chen, Yimin; Wang, Guoxiang; Shen, Xiang, et al |
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Type | Journal article |
Date Published | 2014 |
Date Created | - |
Crystallization characteristics of Mg-doped Ge2Sb 2Te5 films for phase change memory applications
Author(s) | Fu, Jing; Shen, Xiang; Nie, Qiuhua, et al |
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Type | Journal article |
Date Published | 2013 |
Date Created | - |
Enhanced thermal stability and electrical behavior of Zn-doped Sb2Te films for phase change memory application
Author(s) | Shen, Xiang; Wang, Guoxiang; Wang, R. P., et al |
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Type | Journal article |
Date Published | 1-Apr-2013 |
Date Created | - |
Improved phase-change characteristics of Zn-doped amorphous Sb₇Te₃ films for high-speed and low-power phase change memory
Author(s) | Wang, Guoxiang; Shen, Xiang; Nie, Qiuhua, et al |
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Type | Journal article |
Date Published | 17-Jul-2013 |
Date Created | - |
Improved thermal and electrical properties of Al-doped Ge 2 Sb 2 Te 5 films for phase-change random access memory
Author(s) | Wang, Guoxiang; Shen, Xiang; Nie, Qiuhua, et al |
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Type | Journal article |
Date Published | 2012 |
Date Created | - |
Phase change behaviors of Zn-doped Ge2Sb2Te5 films
Author(s) | Wang, Guoxiang; Nie, Qiuhua; Shen, Xiang, et al |
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Type | Journal article |
Date Published | 1-Aug-2012 |
Date Created | - |
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